BSS123N OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R V =10 V 6 W DS(on),max GS Enhancement mode V =4.5 V 10 GS Logic level (4.5V rated) I 0.19 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free RoHS compliant, Halogen free 3 1 2 Marking Type Package Tape and Reel Information Halogon Free Packing BSS123N SOT23 H6327: 3000 pcs/ reel Yes Non dry SAs Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 0.19 A D A T =70C 0.15 A I T =25C Pulsed drain current 0.77 D,pulse A Avalanche energy, single pulse E I =0.19A, R =25W 2.0 mJ AS D GS I =0.19A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2012-11-21BSS123N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =VgsV, I =13A Gate threshold voltage 0.8 1.4 1.8 GS(th) DS D V =100V, V =0V, DS GS I Drain-source leakage current - - 0.01 mA DSS T =25C j V =100V, V =0V, DS GS - - 5 T =150C j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =0.15A - 2.7 10 W DS(on) GS D V =10V, I =0.19A - 2.4 6 GS D V >2 I R , DS D DS(on)max Transconductance g 0.41 - S fs I =0.15A D 1) Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB Rev 2.3 page 2 2012-11-21