X-On Electronics has gained recognition as a prominent supplier of BSS123NH6433XTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS123NH6433XTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS123NH6433XTMA1 Infineon

BSS123NH6433XTMA1 electronic component of Infineon
BSS123NH6433XTMA1 Infineon
BSS123NH6433XTMA1 MOSFETs
BSS123NH6433XTMA1  Semiconductors

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See Product Specifications
Part No. BSS123NH6433XTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
Datasheet: BSS123NH6433XTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0381 ea
Line Total: USD 381 
Availability - 1144600
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
582
Ship by Tue. 15 Apr to Fri. 18 Apr
MOQ : 5
Multiples : 5
5 : USD 0.2112
50 : USD 0.1659
150 : USD 0.1227
500 : USD 0.0972
2500 : USD 0.0867
5000 : USD 0.0814

11557
Ship by Fri. 04 Apr to Tue. 08 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3062
10 : USD 0.17
100 : USD 0.0852
500 : USD 0.0759
1000 : USD 0.0627
5000 : USD 0.055
10000 : USD 0.0429
20000 : USD 0.0407

2694
Ship by Fri. 04 Apr to Tue. 08 Apr
MOQ : 5
Multiples : 1
5 : USD 0.3164
10 : USD 0.2142
25 : USD 0.1568
50 : USD 0.1302
100 : USD 0.1092

38654
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 571
Multiples : 1
571 : USD 0.1924

1144600
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 10000
Multiples : 10000
10000 : USD 0.0381

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSS123NH6433XTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS123NH6433XTMA1 and other electronic components in the MOSFETs category and beyond.

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BSS123N OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R V =10 V 6 W DS(on),max GS Enhancement mode V =4.5 V 10 GS Logic level (4.5V rated) I 0.19 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free RoHS compliant, Halogen free 3 1 2 Marking Type Package Tape and Reel Information Halogon Free Packing BSS123N SOT23 H6327: 3000 pcs/ reel Yes Non dry SAs Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 0.19 A D A T =70C 0.15 A I T =25C Pulsed drain current 0.77 D,pulse A Avalanche energy, single pulse E I =0.19A, R =25W 2.0 mJ AS D GS I =0.19A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2012-11-21BSS123N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =VgsV, I =13A Gate threshold voltage 0.8 1.4 1.8 GS(th) DS D V =100V, V =0V, DS GS I Drain-source leakage current - - 0.01 mA DSS T =25C j V =100V, V =0V, DS GS - - 5 T =150C j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =0.15A - 2.7 10 W DS(on) GS D V =10V, I =0.19A - 2.4 6 GS D V >2 I R , DS D DS(on)max Transconductance g 0.41 - S fs I =0.15A D 1) Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB Rev 2.3 page 2 2012-11-21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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