About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSG0811ND


Infineon Technologies MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 43782
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USD 1.3289

Multiples of: 1

50 A25 V2.4 mOhms , 700 uOhmsN - Channel 1.2 V- 55 C+ 150 C6.25 WSmd/SmtTISON - 8ReelSi2 Channel16 V8.4 nC , 29 nCEnhancement Optimos
BSZ520N15NS3 G


MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
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Infineon Availability : 43503
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USD 0.698

Multiples of: 1

21 A150 V42 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V12 nCEnhancement Optimos
BSS159N H6906


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon Availability : 43391
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USD 0.2646

Multiples of: 1

230 mA60 V1.7 OhmsN - Channel 3.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.4 nCDepletion  
BSC072N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
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Infineon Availability : 43157
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USD 0.8338

Multiples of: 1

            Optimos 5      
BSZ100N06NSATMA1


Infineon Technologies MOSFET
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Infineon Availability : 43005
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USD 0.3634

Multiples of: 1

           Reel      Optimos
BSS169 H6906


Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
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Infineon Availability : 42942
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USD 0.35

Multiples of: 1

90 mA100 V12 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V2.8 nCDepletion  
IRFZ34NSTRLPBF


MOSFET N Trench 55V 29A (Tc) 4V @ 250uA 40 mΩ @ 16A,10V TO-263-2 RoHS
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Infineon Availability : 42680
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USD 0.572

Multiples of: 800

29 A55 V40 mOhmsN - Channel    68 WSmd/SmtD2PAKReelSi1 Channel20 V22.7 nC   
BSS119N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon Availability : 42601
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USD 0.0902

Multiples of: 1

190 mA100 V2.406 OhmsN - Channel 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancement  
SPS01N60C3


MOSFET COOL MOS POWER TRANSISTOR
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Infineon Availability : 42195
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USD 0.3818

Multiples of: 1137

800 mA600 V6 OhmsN - Channel 2.1 V- 55 C+ 150 C11 WThrough HoleTO - 251TubeSi1 Channel20 V3.9 nCEnhancement Coolmos
IPZ40N04S5L7R4ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon Availability : 41561
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USD 0.3473

Multiples of: 1

   N - Channel     Smd/SmtTSDSON - 8Cut TapeSi1 Channel   Aec - Q101 
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