Je R BSZ520N15NS3 G TM%& 3 Power-Transistor Product Summary Features V )-( K 9I Q ) AD:>:J65 7 B 54 54 4 F6BC: R -* 9 ZNd Q ( 492 6= B>2 = =6F6= I *) 6 9 Q H46==6 D 82 D6 492 B86 H R AB 5E4D ) 9 Q & G B6C:CD2 46 R 9 F=%JI9IED%0 Q T A6B2 D: 8 D6>A6B2 DEB6 Q *3 7B66 =62 5 A=2 D: 8 , - 4 >A=:2 D ) Q + E2 =:7:65 2 44 B5: 8 D 7 B D2 B86D 2 AA=:42 D: Q 2 = 86 7B66 2 44 B5: 8 D Type Package Marking -1 ( ( - F=%JI9IED%0 -*(D)-D Maximum ratings, 2 D T T E =6CC D96BG:C6 CA64:7:65 W Parameter Symbol Conditions Value Unit I T T D: E EC 5B2 : 4EBB6 D *) 6 9 8 T T ), 8 * I T T 0, *E=C65 5B2 : 4EBB6 D 9 aY R 8 E F2 =2 496 6 6B8I C: 8=6 AE=C6 I R .( Z 6I 9 =I V 2 D6 C EB46 F =D2 86 q*( K =I P T T * G6B 5:CC:A2 D: -/ L 8 T T ) A6B2 D: 8 2 5 CD B2 86 D6>A6B2 DEB6 T W T 4=:>2 D:4 42 D68 BI ( ) -. 2 5 - * C66 7:8EB6 , 6F A2 86 BSZ520N15NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics .96B>2 = B6C:CD2 46 E 4D: 42 C6 R % % *&* A L U 8 .96B>2 = B6C:CD2 46 * + R % % .( U 6 4> 4 =: 8 2 B62 WE 4D: 2 >3 :6 D Electrical characteristics, 2 D T T E =6CC D96BG:C6 CA64:7:65 W Static characteristics V V / I > B2 : C EB46 3 B62 <5 G F =D2 86 )-( % % K7H 9II =I 9 V V 4V I V 2 D6 D9B6C9 =5 F =D2 86 * + , = U 9I =I 9 V / V / 9I =I 16B 82 D6 F =D2 86 5B2 : 4EBB6 D I % (&) ) r6 9II T T W V / V / 9I =I % )( )(( T T W 2 D6 C EB46 =62 <2 86 4EBB6 D I V / V / % ) )(( 6 =II =I 9I R V / I B2 : C EB46 CD2 D6 B6C:CD2 46 % ,* -* 9 =I 9 V / I % ,* -* =I 9 R 2 D6 B6C:CD2 46 % *&) % = gV g5*gI gR 9I 9 9 ZNd J N P QaP N PR g )) *) % I S I 9 + * 6F:46 >> H >> H >> 6A HI * , G:D9 4> 6 =2 I6B V > D9:4< 4 AA6B 2 B62 7 B 5B2 : 4 64D: * :C F6BD:42 = : CD:== 2 :B , 6F A2 86