BSG0811ND Product Summary Power Block Q1 Q2 Features V 25 25 V DS Dual asymmetric N-channel OptiMOS5 MOSFET R V =10 V 3 0.8 mW Logic level (4.5V rated) DS(on),max GS V =4.5 V 4 1.1 GS Optimized for high performance buck converters 1) I 50 50 A Qualified according to JEDEC for target applications D (4) S1/D2 (VPhase) (5) D1 (Vin) Pb-free lead plating RoHS compliant Q1 (9) S1/D2 (VPhase) (6) (3) D1 (Vin) Halogen-free according to IEC61249-2-21 S1/D2 (VPhase) (7) (2) S1 (VPhase) Q2 (8) (1) G2 (GLS) G1 (GHS) (10) S2 (GND) Top view Type Package Marking BSG0811ND PG-TISON8-4 0811ND 2) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Q1 Q2 I T =70C,V =10 V Continuous drain current 50 50 A D C GS T =70C,V =4.5 V 50 50 C GS T =25C, A 31 50 3) V =4.5 V GS T =25C, A 19 41 4) V =4.5 V GS I T =70C Pulsed drain current 160 160 D,pulse C Q1: I =10A, D E Q2: I =20A, Avalanche energy, single pulse 30 160 mJ AS D R =25W GS V 16 Gate source voltage V GS 3) Power dissipation P 6.25 6.25 W T =25C tot A 4) T =25 C 2.5 2.5 A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 Rev.2.2 page 1 2017-08-11BSG0811ND Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Q1 - - 4.3 K/W thJC Thermal resistance, junction - case Q2 - - 1.8 R Q1 thJA Thermal resistance, junction - application specific - - 20 2) 3) ambient board Q2 Q1 2 4) - - 50 6 cm cooling area Q2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage Q1 6) V V =0V, I =1mA - - V 25 (BR)DSS GS D Q2 Gate threshold voltage Q1 V V =V , I =250A 1.2 1.6 2 GS(th) DS GS D Q2 Zero gate voltage drain current Q1 I DSS V =25V, V =0V, DS GS - - 1 A T =25C j Q2 Q1 V =25V, V =0V, DS GS - - 100 T =150C j Q2 I Gate-source leakage current Q1 GSS V =20V, V =0V - - 100 nA GS DS Q2 Q1 R - 3.2 4.0 mW DS(on) Drain-source on-state V =4.5V, I =20A GS D resistance Q2 - 0.9 1.1 Q1 - 2.4 3.0 V =10V, I =20A GS D Q2 - 0.7 0.8 Gate resistance Q1 R - 0.7 1.2 W G Q2 - 0.7 1.2 g Transconductance Q1 46 93 - S fs V >2 I R , DS D DS(on)max I =20A D Q2 90 180 - 2) Only one of both transistors active 3) 8 Layers copper 70m thickness. PCB in still air. 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 2 2017-08-11