SPS01N60C3 Cool MOS Power Transistor V T 650 V DS jmax Feature R 6 DS(on) New revolutionary high voltage technology I 0.8 A D Ultra low gate charge PG-TO251-3-11 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPS01N60C3 PG-TO251-3-11 - 01N60C3 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current I D T = 25 C 0.8 C T = 100 C 0.5 C 1.6 Pulsed drain current, t limited by T I p jmax D puls 20 mJ Avalanche energy, single pulse E AS I = 0.6 A, V = 50 V D DD 1) E 0.01 Avalanche energy, repetitive t limited by T AR AR jmax I = 0.8 A, V = 50 V D DD 0.8 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage static V V 20 GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 11 W C tot C Operating and storage temperature T , T -55... +150 j stg 3) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.1 Page 1 2008-04-07SPS01N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 0.8 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 11 K/W Thermal resistance, junction - case thJC R - 75 Thermal resistance, junction - ambient, leaded - thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 2) 6 cm cooling area - - 50 Soldering temperature, wavesoldering T - - 260 C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =0.8A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =250, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.1 1 j T =150C - - 50 j V =30V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =0.5A, Drain-source on-state resistance R GS D DS(on) T =25C - 5.6 6 j T =150C - 15.1 - j Rev. 2.1 Page 2 2008-04-07