About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 152017
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USD 0.1024
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
IRF7410TRPBF


MOSFET P Trench 12V 16A 900mV @ 250uA 7 mΩ @ 16A,4.5V SOIC-8_150mil RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 147440
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USD 0.4367
Multiples of: 4000

16 A12 V7 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel8 V91 nC   
BSS138N H6433


Infineon Technologies MOSFET N-Ch 60V 230mA SOT-23-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 140537
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USD 0.0449
Multiples of: 1

230 mA60 V2.2 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.4 nCEnhancement  
BSR316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 135037
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USD 0.1736
Multiples of: 1

            Sipmos      
BSD235NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 134583
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USD 0.0932
Multiples of: 1

950 mA20 V266 mOhms , 266 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi2 Channel12 V320 pC , 320 pCEnhancementAec - Q101 
BSD235C H6327


Infineon Technologies MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 133028
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USD 0.0978
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN - Channel, P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
BSC010N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 130950
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USD 0.8948
Multiples of: 5000

            Optimos      
BSC054N04NS G


MOSFET OptiMOS 3 PWR TRANS 40V 81A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 130319
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USD 0.468
Multiples of: 1

81 A40 V5.4 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTDSONReelSi1 Channel10 V26 nCEnhancement Optimos
IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 122264
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USD 0.0769
Multiples of: 5

5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
Hot IRF540NPBF


MOSFET N Trench 100V 33A 4V @ 250uA 44 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 118380
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USD 0.2225
Multiples of: 1

            Hexfet®      
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