BSD235C OptiMOS 2 + OptiMOS-P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel V -20 20 V DS Enhancement mode R V =4.5 V 1200 350 mW DS(on),max GS Super Logic level (2.5V rated) V =2.5 V 2100 600 GS Avalanche rated I -0.53 0.95 A D Qualified according to AEC Q101 100% lead-free RoHS compliant PG-SOT-363 Halogen-free according to IEC61249-2-21 6 5 4 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD235C PG-SOT-363 H6327: 3000 pcs / reel X9s Yes Non dry 1) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P N Continuous drain current I T =25C -0.53 0.95 A D A T =70C -0.46 0.76 A I T =25C Pulsed drain current -2.1 3.8 D,pulse A P: I =-0.53A, D N: I =0.95A, Avalanche energy, single pulse E 1.4 1.6 mJ D AS R =25W GS V Gate source voltage 12 V GS P T =25C 0.5 Power dissipation W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD class JESD22-A114-HBM 0 (<250V) C T 260 Soldering temperature C solder 55/150/56 IEC climatic category DIN IEC 68-1 1) Remark: only one of both transistors active Rev.2.4 page 1 2015-10-08BSD235C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - P 2) R - - 250 K/W minimal footprint thJA ambient N Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage P - - -20 V (BR)DSS GS D V =0V, I =250A N 20 - - GS D Gate threshold voltage P V V =V , I =-1.5A -1.2 -0.9 -0.6 GS(th) DS GS D N V =V , I =1.6A 0.7 0.95 1.2 DS GS D V =-20V, V =0V, DS GS I Zero gate voltage drain current P - - -1 A DSS T =25C j V =20V, V =0V, DS GS N - - 1 T =25C j V =-20V, V =0V, DS GS P - - -100 T =150C j V =20V, V =0V, DS GS N - - 100 T =150C j P I V =12V, V =0V Gate-source leakage current - - 100 nA GSS GS DS N V =-2.5V, GS R P - 1221 2100 mW DS(on) I =-0.17A Drain-source on-state D resistance V =2.5V, I =0.29A N - 415 600 GS D V =-4.5V, I =- GS D P - 745 1200 0.53A V =4.5V, I =0.95A N - 266 350 GS D V >2 I R , DS D DS(on)max g Transconductance P - 0.7 - S fs I =-0.46A D V >2 I R , DS D DS(on)max N - 2 - I =0.76A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB Rev.2.4 page 2 2015-10-08