About MOSFET

On Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS3669S


Fairchild Semiconductor MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
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ON Semiconductor Availability : 52380
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USD 1.0845

Multiples of: 3000

60 A30 V10 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi2 Channel20 V34 nC  Power Stage Powertrench
FQD12N20LTM


Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
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ON Semiconductor Availability : 51878
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USD 0.3795

Multiples of: 1

            Qfet®      
NTR3A052PZT1G


MOSFET PFET SOT23 20V 52MO
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ON Semiconductor Availability : 49875
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USD 0.1576

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3.6 A20 V47 mOhmsP - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V11.9 nCEnhancement  
FQD5P20TM


Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
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ON Semiconductor Availability : 46924
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USD 0.3519

Multiples of: 1

            Qfet®      
NDT014


MOSFET N-Channel FET Enhancement Mode
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ON Semiconductor Availability : 46846
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USD 0.4255

Multiples of: 1

2.7 A60 V200 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
FDN335N


Transistor: N-MOSFET; unipolar; 20V; 1.7A; 500mW; SuperSOT-3
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ON Semiconductor Availability : 46560
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USD 0.1273

Multiples of: 3000

            Powertrench®      
FDMS7692


MOSFET PT7 30/20V Nch PowerTrench
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ON Semiconductor Availability : 45742
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USD 0.4761

Multiples of: 1

14 A30 V6.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
NTR5103NT1G


MOSFET NFET SOT23 60V 310MA 2.5
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ON Semiconductor Availability : 44789
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USD 0.0244

Multiples of: 5

310 mA60 V2.5 OhmsN - Channel 1.9 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V810 pCEnhancement  
FDC655BN


Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
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ON Semiconductor Availability : 43650
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USD 0.1417

Multiples of: 3000

   N Channel               
BSS123L


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
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ON Semiconductor Availability : 17460
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USD 0.0322

Multiples of: 3000

                   
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