About MOSFET

Toshiba MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6J507NU,LF


P-Channel 30 V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 1081
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USD 0.1667

Multiples of: 1

10 A30 V20 mOhmsP - Channel 1 V + 150 C2.5 WSmd/SmtUDFN6B - 6Cut TapeSi1 Channel- 10 V13.6 nCEnhancement  
TK110N65Z,S1F


MOSFET MOSFET 650V 110mOhms DTMOS-VI
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 1072
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USD 3.4765

Multiples of: 1

24 A650 V110 mOhmsN - Channel 4 V- 55 C+ 150 C190 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V40 nCEnhancement  
TK16A60W,S4VX


Toshiba MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC
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Toshiba Availability : 1044
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USD 0.8065

Multiples of: 1

15.8 A600 V160 mOhmsN - Channel 2.7 v to 3.7 V  40 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V38 nCEnhancement Dtmosiv
2SK2614(TE16L1,Q)


MOSFET DP PLN,ACTIVE,DISCON(09-10)PHASE-OUT(11-01)OBSOLETE(11-04),
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Toshiba Availability : 1036
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USD 1.134

Multiples of: 1

           Reel       
TK650A60F,S4X(S


Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
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Toshiba Availability : 1028
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USD 1.69

Multiples of: 1

                   
TK31V60W,LVQ


MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 1002
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USD 4.9065

Multiples of: 1

30.8 A600 V78 mOhmsN - Channel30 V2.7 v to 3.7 V- 55 C+ 150 C240 WSmd/SmtDFN - 5 8X8Reel 1 Channel30 V86 nCEnhancement Dtmosiv
Hot TK10A80E,S4X


Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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Toshiba Availability : 1001
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USD 0.5667

Multiples of: 1

10 A800 V700 mOhmsN - Channel30 V4 V- 55 C+ 150 C50 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V46 nCEnhancement Dtmosiv
SSM6J213FE(TE85L,F


Toshiba MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF
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Toshiba Availability : 976
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USD 0.1885

Multiples of: 1

- 2.6 A- 20 V250 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V4.7 nC   
Hot TK5A65D(STA4,Q,M)


Toshiba MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
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Toshiba Availability : 967
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USD 0.3888

Multiples of: 1

5 A650 V1.43 OhmsN - Channel     Through HoleSC - 62 - 3ReelSi1 Channel     
TK31A60W,S4VX


Toshiba MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 965
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USD 2.4793

Multiples of: 1

30.8 A600 V73 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V86 nCEnhancement  
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