About MOSFET

Toshiba MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K35MFV(TPL3)


Toshiba MOSFET Singel N-ch 20V 0.18A
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Toshiba Availability : 0
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USD 0.0589

Multiples of: 1

180 mA20 V3 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtVESM - 3ReelSi1 Channel10 V Enhancement  
SSM3K17SU,LF


N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount USM
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USD 0.06

Multiples of: 1

100 mA50 V20 OhmsN - Channel    150 mWSmd/SmtSC - 70ReelSi1 Channel7 V    
SSM3J353F,LF


MOSFET Small-signal MOSFET ID -2A, VDSS -30V
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Toshiba Availability : 0
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USD 0.0638

Multiples of: 3000

2 A30 V125 mOhmsP - Channel 2.2 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 346 - 3Cut TapeSi1 Channel20 V3.4 nCEnhancement  
SSM3J352F,LF


MOSFET LowON Res MOSFET ID=-2A VDSS=-20V
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Toshiba Availability : 0
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USD 0.0638

Multiples of: 3000

2 A20 V90 mOhmsP - Channel 1.2 V + 150 C600 mWSmd/SmtS - M in I - 3Cut TapeSi1 Channel12 V5.1 nCEnhancement  
SSM3K36FS(T5L,F,D)


MOSFET 20V VDS 10V VGSS 500mA ID 150mW PD
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Toshiba Availability : 0
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by Mon. 26 Aug
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USD 0.0644

Multiples of: 3000

500 mA20 V0.63 OhmsN - Channel    150 mWSmd/SmtSSM - 3Reel       
SSM6N7002BFU,LF


MOSFET 60V VDSS 20V VGSS 200mA ID 150mW
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Toshiba Availability : 0
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USD 0.0646

Multiples of: 3000

200 mA60 V3.3 OhmsN - Channel 3.1 V- 55 C+ 150 C300 mWSmd/SmtTSSOP - 6ReelSi2 Channel20 V Enhancement  
SSM3J355R,LF


MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
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Toshiba Availability : 0
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USD 0.0655

Multiples of: 3000

6 A20 V23 mOhmsP - Channel 1 V-+ 150 C2 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel10 V16.6 nCEnhancement  
SSM3J340R,LF


MOSFET Sm Low ON Resistance SOT-23F
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Toshiba Availability : 0
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USD 0.0668

Multiples of: 3000

           Cut Tape       
SSM3J372R,LF


MOSFET P-CH VDSS:-30V VGSS:-12+6V ID
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Toshiba Availability : 0
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USD 0.0698

Multiples of: 3000

6 A30 V42 mOhmsP - Channel - 1.2 V + 150 C2 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel- 12 v , 6 V8.2 nCEnhancement U - Mosvi
SSM3K09FU,LF


MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 0
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USD 0.0733

Multiples of: 1

400 mA30 V500 mOhmsN - Channel 1.1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V Enhancement  
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