About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2301


20V 2.2A 700mW 90mΩ@4.5V,1.5A P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yongyutai Electronics Availability : 277023
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USD 0.0086
Multiples of: 50

                   
DMP3125L-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated Availability : 276954
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USD 0.0598
Multiples of: 1

2.5 A30 V76 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3 Si1 Channel10 V3.1 nCEnhancement  
NX138AKR


Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23
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Nexperia Availability : 276401
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USD 0.0184
Multiples of: 1

                   
DMP3085LSD-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A
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Diodes Incorporated Availability : 276043
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USD 0.0874
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- 3.9 A , - 3.9 A- 30 v , - 30 V70 mOhms , 70 mOhmsP - Channel+/- 20 V- 3 V- 55 C+ 150 C1.1 WSmd/SmtSO - 8Reel-2 Channel20 V11 nCEnhancement  
SIA931DJ-T1-GE3


MOSFET -30V 65mOhm@-10V -4.5A P-CH
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Vishay Availability : 275674
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USD 0.1622
Multiples of: 1

4.5 A- 30 V77 mOhmsP - Channel20 V- 2.2 V- 55 C+ 150 C7.8 WSmd/SmtSC - 70 - 6ReelSi  8.5 nCEnhancement Trenchfetr
SI1024X-T1-GE3


MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V
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Vishay Availability : 273899
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USD 0.1679
Multiples of: 1

600 mA 700 mOhmsN - Channel 450 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel4.5 V750 pCEnhancement Trenchfet
AO3400-HXY


30V 5.8A 28mΩ@10V,5.8A 1.4W N Channel SOT-23 MOSFETs ROHS
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HXY MOS Availability : 273412
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USD 0.0136
Multiples of: 20

                   
SQ2318AES-T1_BE3


MOSFET N-CHANNEL 40V D-S
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Vishay Availability : 270426
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USD 0.1897
Multiples of: 1

8 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V8.7 nCEnhancement TrenchFET
SQ2361ES-T1_BE3


MOSFET P-CHANNEL 60V D-S
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Vishay Availability : 268012
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USD 0.2825
Multiples of: 1

           Cut Tape       
CJ3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjiang Availability : 267376
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USD 0.0231
Multiples of: 10

                   
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