About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002


Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 0.272A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yangjie Availability : 209442
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USD 0.0118
Multiples of: 20

            Trench Power Mv      
DMG3406L-13


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated Availability : 208185
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USD 0.0552
Multiples of: 1

3.6 A30 V25 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11.2 nCEnhancement  
AP2302B


MOSFET N Trench 20V 2.8A 1.2V @ 50uA 55 mΩ @ 2.8A,4.5V SOT-23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li Availability : 207980
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USD 0.0183
Multiples of: 50

                   
SQ1470AEH-T1_GE3


MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
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Vishay Availability : 207349
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USD 0.1875
Multiples of: 1

1.7 A30 V45 mOhmsN - Channel 600 mV- 55 C+ 175 C3.3 WSmd/SmtSOT - 363 - 6ReelSi1 Channel12 V5.2 nCEnhancementAec - Q101Trenchfet
DMN63D8L-7


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated Availability : 206610
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USD 0.025
Multiples of: 3000

350 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C520 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
AO3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Hottech Availability : 206342
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USD 0.0173
Multiples of: 20

                   
DMP4047SSD-13


Diodes Incorporated MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss
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Diodes Incorporated Availability : 206125
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USD 0.2986
Multiples of: 2500

- 6.5 A , - 6.5 A- 40 v , - 40 V45 mOhms , 45 mOhmsP - Channel - 1 v , - 1 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 v , 20 V10.6 nC , 16 nCEnhancement  
FDMS7694


MOSFET 30V NCh PowerTrench MOSFET
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ON Semiconductor Availability : 205382
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USD 0.3174
Multiples of: 1

13.2 A30 V11.1 mOhmsN - Channel 1 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
SI2319DS-T1-E3


MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
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Vishay Availability : 205084
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USD 0.2725
Multiples of: 1

3.0 A40 V82 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V17 nCEnhancement Trenchfet
SISS26LDN-T1-GE3


MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
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Vishay Availability : 203978
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USD 0.5382
Multiples of: 1

81.2 A60 V4.3 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V48 nCEnhancement Trenchfet, Powerpak
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