About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTA7002NT1G


MOSFET NFET SC75 30V 154MA 7OHM
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ON Semiconductor Availability : 811841
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USD 0.0529
Multiples of: 1

154 mA30 V1.4 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSC - 75ReelSi1 Channel10 V  Aec - Q101 
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon Availability : 792374
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USD 0.0506
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 RoHS
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Youtai Availability : 782955
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USD 0.0175
Multiples of: 20

                   
BSS138-13-F


50V 200mA 300mW 3.5O@10V,220mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 751070
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USD 0.0285
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200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V-Enhancement  
BSH205G2AR


P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB
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Nexperia Availability : 750021
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USD 0.0667
Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Digi - Reel®Mosfet (Metal Oxide)      
SI2371EDS-T1-GE3


Vishay Semiconductors MOSFET -30V 45mOhm10V -4.8A P-Ch G-III
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Vishay Availability : 743964
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USD 0.0701
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- 4.8 A- 30 V45 mOhmsP - Channel - 0.6 v to - 1.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V10.6 nCEnhancement Trenchfet Power Mosfet
BSS123NH6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
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Infineon Availability : 713436
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USD 0.0483
Multiples of: 1

            Optimos      
T2N7002BK,LM(T


Transistor: N-MOSFET; unipolar; 60V; 400mA; 320mW; SOT23
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Toshiba Availability : 698400
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USD 0.0182
Multiples of: 3000

                   
MMBF170Q-7-F


MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr
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Diodes Incorporated Availability : 692580
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USD 0.0529
Multiples of: 3000

500 mA70 V5.3 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V EnhancementAec - Q101 
DMTH4005SPSQ-13


MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A
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Diodes Incorporated Availability : 688700
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USD 0.6142
Multiples of: 2500

20.9 A40 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 V49.1 nCEnhancementAec - Q101 
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