About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vds - Drain-source Breakdown Voltage
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJ3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjiang Availability : 347788
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USD 0.022
Multiples of: 10

                   
BSS84P H6327


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon Availability : 346546
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USD 0.0403
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170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
NX7002AK,215


N-Channel 60 V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
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Nexperia Availability : 342671
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USD 0.0074
Multiples of: 50

190 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.33 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V0.33 nCEnhancement  
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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HXY MOS Availability : 339357
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USD 0.0071
Multiples of: 50

                   
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjiang Availability : 336602
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USD 0.0292
Multiples of: 10

                   
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay Availability : 335562
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USD 0.2012
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3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
AO3401


30V 4.2A 65mO@10V,4.2A 350mW P Channel SOT-23 MOSFETs ROHS
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TWGMC Availability : 334281
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USD 0.0236
Multiples of: 10

                   
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon Availability : 332947
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USD 0.0978
Multiples of: 1

            Optimos 2      
CMLDM3737 TR


MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
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Central Semiconductor Availability : 332400
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USD 0.1612
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   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
BSS138K-13


Trans MOSFET N-CH 50V 0.31A 3-Pin SOT-23 T/R
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Diodes Incorporated Availability : 9641
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USD 0.0299
Multiples of: 10

310 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C0.54 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.95 nCEnhancement  
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