X-On Electronics has gained recognition as a prominent supplier of BSS84P H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS84P H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS84P H6327 Infineon

BSS84P H6327 electronic component of Infineon
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See Product Specifications
Part No.BSS84P H6327
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -60V -170mA SOT-23-3
Datasheet: BSS84P H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3157 ea
Line Total: USD 0.32 
Availability - 454700
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2750
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2344
50 : USD 0.1727
150 : USD 0.1462
500 : USD 0.1133
3000 : USD 0.0532
6000 : USD 0.0443

454700
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3157
10 : USD 0.2189
100 : USD 0.1386
1000 : USD 0.0616
3000 : USD 0.055
9000 : USD 0.044
24000 : USD 0.0418
45000 : USD 0.0396
99000 : USD 0.0374

17324
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 725
Multiples : 1
725 : USD 0.1356
1000 : USD 0.1312
2500 : USD 0.1273
5000 : USD 0.1237
10000 : USD 0.1208

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSS84P H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS84P H6327 and other electronic components in the MOSFETs category and beyond.

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BSS84P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 8 DS(on) Enhancement mode I -0.17 A D Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 Qualified according to AEC Q101 1 VPS05161 Halogen-free according to IEC61249-2-21 Drain Tape and Reel Type Package Marking pin 3 Gate BSS84P PG-SOT-23 H 6327:3000pcs/r. YBs pin1 Source BSS84P PG-SOT-23H6433:10000pcs/r. YBs pin 2 Maximum Ratings, at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.17 A T =70C -0.14 A -0.68 Pulsed drain current I D puls T =25C A 2.6 mJ Avalanche energy, single pulse E AS I =-0.17 A , V =-25V, R =25 DD GS D E 0.036 Avalanche energy, periodic limited by T AR jmax Reverse diode dv/dt dv/dt -6 kV/s I =-0.17A, V =-48V, di/dt=-200A/s, T =150C DS jmax S Gate source voltage V V 20 GS Power dissipation P 0.36 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev 2.7 Page 1 2011-07-11 BSS84P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 200 K/W Thermal resistance, junction - soldering point R thJS (Pin 3) SMD version, device on PCB: R thJA min. footprint - - 350 2 1) 6 cm cooling area - - 300 Electrical Characteristics, at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Static Characteristics V -60 - - V Drain-source breakdown voltage (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-20A D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS A V =-60V, V =0, T =125C - -10 -100 DS GS A - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 8 12 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.14A GS D - 5.8 8 Drain-source on-state resistance R DS(on) V =-10V, I =-0.17A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.7 Page 2 2011-07-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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