X-On Electronics has gained recognition as a prominent supplier of BSS84P H6327 MOSFET across the USA, India, Europe, Australia, and various other global locations. BSS84P H6327 MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BSS84P H6327 Infineon

BSS84P H6327 electronic component of Infineon
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See Product Specifications
Part No.BSS84P H6327
Manufacturer: Infineon
Category: MOSFET
Description: MOSFET P-Ch -60V -170mA SOT-23-3
Datasheet: BSS84P H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3496 ea
Line Total: USD 0.35

Availability - 343458
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9501
Ship by Tue. 23 Jul to Fri. 26 Jul
MOQ : 5
Multiples : 5
5 : USD 0.2353
50 : USD 0.1751
150 : USD 0.1494
500 : USD 0.1172
3000 : USD 0.0583
6000 : USD 0.0498

343458
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3496
10 : USD 0.2415
100 : USD 0.1541
1000 : USD 0.0701
3000 : USD 0.061
9000 : USD 0.0483
24000 : USD 0.046
45000 : USD 0.0437
99000 : USD 0.0402

17324
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 459
Multiples : 1
459 : USD 0.2222
500 : USD 0.2141
1000 : USD 0.2071
2500 : USD 0.201
5000 : USD 0.1955
10000 : USD 0.1908

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSS84P H6327 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS84P H6327 and other electronic components in the MOSFET category and beyond.

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BSS84P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 8 DS(on) Enhancement mode I -0.17 A D Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 Qualified according to AEC Q101 1 VPS05161 Halogen-free according to IEC61249-2-21 Drain Tape and Reel Type Package Marking pin 3 Gate BSS84P PG-SOT-23 H 6327:3000pcs/r. YBs pin1 Source BSS84P PG-SOT-23H6433:10000pcs/r. YBs pin 2 Maximum Ratings, at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.17 A T =70C -0.14 A -0.68 Pulsed drain current I D puls T =25C A 2.6 mJ Avalanche energy, single pulse E AS I =-0.17 A , V =-25V, R =25 DD GS D E 0.036 Avalanche energy, periodic limited by T AR jmax Reverse diode dv/dt dv/dt -6 kV/s I =-0.17A, V =-48V, di/dt=-200A/s, T =150C DS jmax S Gate source voltage V V 20 GS Power dissipation P 0.36 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev 2.7 Page 1 2011-07-11 BSS84P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 200 K/W Thermal resistance, junction - soldering point R thJS (Pin 3) SMD version, device on PCB: R thJA min. footprint - - 350 2 1) 6 cm cooling area - - 300 Electrical Characteristics, at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Static Characteristics V -60 - - V Drain-source breakdown voltage (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-20A D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS A V =-60V, V =0, T =125C - -10 -100 DS GS A - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 8 12 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.14A GS D - 5.8 8 Drain-source on-state resistance R DS(on) V =-10V, I =-0.17A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.7 Page 2 2011-07-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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