About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTFWS010N10MCLTAG


MOSFET PTNG 100V LL IN
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USD 0.4423

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           Cut Tape       
NVD6495NLT4G


ON Semiconductor MOSFET NFET DPAK 100V 23A 56MOHM
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USD 0.4434

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25 A100 V43 mOhmsn - channel 1 V- 55 C+ 175 C83 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V35 nCenhancementaec - q101 
NVMFS6H864NT1G


MOSFET T8 80V SO8FL
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USD 0.4438

Multiples of: 1500

23 A80 V32 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V6.9 nCEnhancementAec - Q101 
NVMFS5C468NLT1G


MOSFET T6 40V NCH LL IN SO8
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USD 0.444

Multiples of: 1500

37 A40 V8.6 mOhmsn - channel 1.2 V- 55 C+ 175 C28 Wsmd/smtSO - FL - 8Cut Tapesi1 channel20 V7.3 nCenhancementaec - q101 
NDF04N60ZG


MOSFET NFET T0220FP 600V 4A 1.8R
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USD 0.4467

Multiples of: 972

4.4 A600 V1.8 Ohmsn - channel 4.5 V- 55 C+ 150 C28 Wthrough holeTO - 220 - 3Tubesi1 channel 19 nC   
NTDV5805NT4G


ON Semiconductor MOSFET NFET 40V 51A 9.5MOHM
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USD 0.4469

Multiples of: 1002

51 A40 V9.5 mOhmsn - channel     smd/smtDPAK - 3Reelsi      
NVD6416ANLT4G


MOSFET N-Channel Power MOSFET 100V, 19A, 74mO Power MOSFET 100V, 19A, 74 mOhm, Single N-Channel, DPAK, Logic Level.
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USD 0.4472

Multiples of: 867

80 A100 V74 mOhmsn - channel  - 55 C+ 175 C71 Wsmd/smtDPAK - 3Reelsi    aec - q101 
FDWS5360L_F085


MOSFET 60V N-Chnl Power Trench MOSFET
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USD 0.4473

Multiples of: 1

60 A60 V6.5 mOhmsn - channel 1 V- 55 C+ 175 C150 Wsmd/smtPOWER - 56 - 8Reelsi1 channel+/- 20 V72 nCenhancement powertrench
FDD9411L_F085


MOSFET PT8N 40V N-ChannelLL PowerTrench MOSFET
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USD 0.4478

Multiples of: 2500

25 A40 V5.6 mOhmsN - Channel 1 V- 55 C+ 175 C48.4 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V27 nCEnhancement  
NTMS4920NR2G


Trans MOSFET N-CH 30V 17A 8-Pin SOIC N T/R
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USD 0.4479

Multiples of: 969

14.1 A30 V3.6 mOhmsn - channel 1.5 V- 55 C+ 150 C1.46 Wsmd/smtSO - 8Reelsi1 channel20 V58.9 nC   
ECH8691-TL-W


MOSFET PCH+PCH 1.5V DRIVE SERIES
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USD 0.45

Multiples of: 1

   P - Channel       Cut TapeSi1 Channel     
NID9N05ACLT4G


MOSFET Power MOSFET, N-Channel, Logic Level, Clamped MOSFET with ESD Protection
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USD 0.4507

Multiples of: 2500

9 A59 V90 mOhmsn - channel  - 55 C+ 175 C1.74 Wsmd/smtDPAK - 3Reelsi1 channel   aec - q101 
NVMFS5826NLT1G


ON Semiconductor MOSFET
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USD 0.4512

Multiples of: 1500

26 A60 V18 mOhmsn - channel 2.5 V- 55 C+ 175 C39 Wsmd/smtSO - 8FLReelsi1 channel20 V17 nC aec - q101 
FDZ1905PZ


Fairchild Semiconductor MOSFET -20V Common Drain PCh 1.5V PowerTrench
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USD 0.4512

Multiples of: 993

- 3 A- 20 V123 mOhmsp - channel8 V - 55 C+ 150 C1.5 Wsmd/smtWLCSP - 6Reelsi2 channel8 V enhancement powertrench
NVMFS5833NT3G


Trans MOSFET N-CH 40V 86A Automotive 5-Pin(4+Tab) SO-FL T/R
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USD 0.4514

Multiples of: 5000

         smd/smtSO - FL - 8Tape And Reelsi    aec - q101 
FW276-TL-2H


MOSFET NCH DUAL 400V 0.7A SOIC8
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USD 0.4516

Multiples of: 1

700 mA450 V12.1 Ohmsn - channel30 V4.5 V- 55 C+ 150 C1.6 Wsmd/smtSOIC - 8Reel   3.7 nC   
NTMD6N03R2G


MOSFET NFET 30V SPCL TR
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USD 0.4519

Multiples of: 961

6 A30 V32 mOhmsn - channel  - 55 C+ 175 C2 Wsmd/smtSOIC - 8 NarrowReelsi2 channel20 V enhancement  
FQB50N06TM


MOSFET 60V N-Channel QFET
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USD 0.4522

Multiples of: 800

50 A60 V22 mOhmsn - channel  - 55 C+ 175 C3.75 Wsmd/smtD2PAKReelsi1 channel25 V enhancement  
NVD4856NT4G


MOSFET NFET DPAK 25V 89A 0.0047R
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USD 0.4525

Multiples of: 1

89 A25 V4.7 mOhmsN - Channel     Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
STD110N02RT4G-VF01


MOSFET NFET DPAK 24V SPCL
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USD 0.4541

Multiples of: 2500

110 A24 V4.1 mOhmsN - Channel 1 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V28 nCEnhancementAec - Q101 
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