About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS5C466NLTAG


MOSFET AFSM T6 40V LL U8FL
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USD 1.3356

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51 A40 V7.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C38 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V7 nCEnhancement  
NTMFS022N15MC


MOSFET PTNG 150V 22MOHM PQFN56
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USD 1.3356

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41.9 A150 V22 mOhmsN - Channel 4.5 V- 55 C+ 150 C80.6 WSMD/SMTPQFN - 8 Si1 Channel- 20 V , + 20 V17 nCEnhancement  
FQPF16N25C


MOSFET N-CH/250V /16A/QFET
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USD 1.3366

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15.6 A250 V270 mOhmsn - channel  - 55 C+ 150 C43 Wthrough holeTO - 220FTubesi1 channel30 V enhancement qfet
FQB7P20TM"F085


MOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3, FULL Reel
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USD 1.3394

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   P Channel               
FDB8896


MOSFET 30V N-Channel PowerTrench
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USD 1.3404

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93 A30 V5.7 mOhmsn - channel  - 55 C+ 175 C80 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement powertrench
FCPF9N60NTYDTU


Fairchild Semiconductor MOSFET UniFET 500V
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USD 1.3408

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         through holeTO - 220FP - 3Tubesi      
FDP20N50


Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
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USD 1.3468

Multiples of: 50

            unifet      
FDB070AN06A0-F085


Trans MOSFET N-CH 60V 15A 3-Pin TO-263AB T/R
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USD 1.3523

Multiples of: 800

80 A60 V6.1 mOhmsN - Channel 4 V- 55 C+ 175 C175 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel 51 nC Aec - Q101 
BBL4001-1E


MOSFET NCH 4V DRIVE SERIES
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USD 1.3534

Multiples of: 350

74 A60 V4.7 mOhmsn - channel 1.2 V + 150 C35 Wthrough holeTO - 220 - 3Tubesi1 channel20 V135 nCenhancement  
FDD6030BL


Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) TO-252AA T/R
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USD 1.3539

Multiples of: 321

           Tape And Reel    enhancement  
FDMS2510SDC


Fairchild Semiconductor MOSFET 20V N-Chan Dual Cool PowerTrench SyncFET
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USD 1.3549

Multiples of: 331

49 A25 V2.9 mOhmsn - channel 1.7 V- 55 C+ 150 C60 Wsmd/smtPOWER - 56 - 8Reelsi2 channel20 V15 nC   
FCPF7N60YDTU


MOSFET 600V N-Channel SuperFET
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USD 1.3569

Multiples of: 330

7 A600 V600 mOhmsn - channel 5 V- 55 C+ 150 C31 Wthrough holeTO - 220FTubesi1 channel30 V30 nCenhancement  
FCPF600N65S3R0


MOSFET N Trench 650V 6A (Tc) 4.5V @ 600uA 600 mΩ @ 3A,10V TO-220F-3 RoHS
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USD 1.3589

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FDB2552_F085


MOSFET N-Chan PowerTrench MOSFET
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USD 1.3599

Multiples of: 1

37 A150 V97 mOhmsn - channel 4 V- 55 C+ 175 C150 Wthrough holeTO - 263ABReelsi1 channel20 V39 nCenhancement powertrench
FCP190N60


MOSFET 600V N-Channel MOSFET SuperFET II
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USD 1.3617

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20.2 A650 V199 mOhmsn - channel  - 55 C+ 150 C208 Wthrough holeTO - 220Tubesi1 channel20 V   superfet ii
FQPF65N06


Transistor: N-MOSFET; unipolar; 60V; 28.3A; 56W; TO220FP
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USD 1.3638

Multiples of: 1

            qfet®      
NVMFS5C604NLWFAFT1G


MOSFET T6 60V HEFET
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USD 1.365

Multiples of: 1

287 A60 V930 uOhmsN - Channel 1.2 V- 55 C+ 175 C200 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V120 nCEnhancementAec - Q101 
NDBA180N10BT4H


MOSFET NCH 180A 100V TO-263
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USD 1.3728

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180 A100 V2.3 mOhmsn - channel 2 V + 175 C200 Wsmd/smtTO - 263 - 3Cut Tapesi1 channel+/- 20 V95 nCenhancement  
NTD5C668NLT4G


MOSFET T6 60V LL DPAK
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USD 1.375

Multiples of: 1

48 A60 V8.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C42 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V18.7 nCEnhancementAec - Q101 
FQU5N40TU


N-Channel 400 V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
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USD 1.3764

Multiples of: 1

3.4 A400 V1.6 Ohmsn - channel  - 55 C+ 150 C2.5 Wthrough holeIPAK - 3Tubesi1 channel30 V enhancement  
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