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On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDA16N50_F109


MOSFET 500V 16.5A NCH
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USD 1.6215

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16.5 A500 V380 mOhmsn - channel  - 55 C+ 150 C205 Wthrough holeTO - 3PNTubesi1 channel30 V enhancement unifet
NTP5860NG


MOSFET Single N-Channel Power MOSFET 60V, 220A, 3.0mO G
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USD 1.6269

Multiples of: 1

98 A60 V3 mOhmsn - channel  - 55 C+ 175 C283 Wthrough holeTO - 220 - 3Tubesi1 channel     
NTP190N65S3HF


MOSFET SUPERFET3 650V FRFET 190M
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USD 1.6348

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20 A650 V190 mOhmsN - Channel 3 V- 55 C+ 150 C162 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V34 nCEnhancement Superfet Iii
NTDS015N15MCT4G


Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK
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USD 1.638

Multiples of: 1

                   
FCP400N80Z


MOSFET SuperFET2 800V 400mohm
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USD 1.6391

Multiples of: 1

14 A800 V400 mOhmsn - channel 2.5 V- 55 C+ 150 C195 Wthrough holeTO - 220 - 3Bulksi1 channel+/- 20 v , +/- 30 V43 nCenhancement superfet ii
FQP30N06L


N-Channel 60 V 32A (Tc) 79W (Tc) Through Hole TO-220-3
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USD 1.6427

Multiples of: 1

   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
FDB9406L_F085


MOSFET N-Channel Power Trench MOSFET
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USD 1.65

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110 A40 V1.2 mOhmsN - Channel 1 V- 55 C+ 175 C176 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V170 nCEnhancement  
FQPF8N80C


Transistor: N-MOSFET; unipolar; 800V; 5.1A; 59W; TO220FP
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USD 1.6524

Multiples of: 1

   N Channel               
NVMFD5C446NLWFT1G


MOSFET T6 40V LL S08FL DS
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USD 1.6561

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145 A40 V2.2 mOhms , 2.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V54 nC , 54 nCEnhancementAec - Q101 
NVMFD5C650NLWFT1G


MOSFET T6 60V LL S08FL DS
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USD 1.6669

Multiples of: 1

111 A60 V3.5 mOhms , 3.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V37 nC , 37 nCEnhancementAec - Q101 
FCHD125N65S3R0-F155


MOSFET Easy Drive 650V 24A 125 mOhm
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USD 1.6717

Multiples of: 1

24 A650 V125 mOhmsN - Channel 4.5 V- 55 C+ 150 C181 WThrough HoleTO - 247AD - 3TubeSi1 Channel30 V46 nCEnhancement  
NVMFS5A140PLZWFT1G


MOSFET -40V4.2MOHMSINGLE
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USD 1.6726

Multiples of: 1

140 A40 V4.2 mOhmsP - Channel 1.2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V136 nCEnhancementAec - Q101 
NVMFS6B14NLWFT1G


MOSFET T5 100V LL S08FL
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USD 1.6882

Multiples of: 1

55 A100 V19 mOhmsn - channel 1 V- 55 C+ 175 C94 Wsmd/smtSOIC - 8Reelsi1 channel+/- 16 V17 nCenhancementaec - q101 
FDBL86563_F085


Fairchild Semiconductor MOSFET 60V 240A TO-LL N-Chnl PowerTrench
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USD 1.6937

Multiples of: 4

240 A60 V2.9 mOhmsn - channel 2 V- 55 C+ 175 C357 Wsmd/smtMO - 299A - 8Reelsi1 channel+/- 20 V130 nCenhancement powertrench
NVD5863NLT4G


ON Semiconductor MOSFET NFET 60V 73A 8.2MOHM
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USD 1.6958

Multiples of: 1

82 A60 V7.1 mOhmsn - channel     smd/smtDPAK - 3Reelsi    aec - q101 
FQA70N15


Fairchild Semiconductor MOSFET 150V N-Channel QFET
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USD 1.6976

Multiples of: 30

70 A150 V28 mOhmsn - channel25 V - 55 C+ 175 C330 Wthrough holeTO - 3P - 3Tubesi1 channel25 V enhancement qfet
BMS3004-1E


MOSFET P-Channel Power MOSFET, -75V, -68A, 8.5mO
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USD 1.6998

Multiples of: 1

68 A- 75 V8.5 mOhmsp - channel20 V- 2.6 V- 55 C+ 150 C40 Wthrough holeTO - 220FP - 3Tubesi1 channel4 V300 nCenhancement  
FQA19N60


MOSFET 600V N-CH QFET
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USD 1.7004

Multiples of: 450

   n - channel  - 55 C+ 150 C through holeTO - 3PNTube       
FQI13N50CTU


Fairchild Semiconductor MOSFET N-CH500V13AQFET
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USD 1.7074

Multiples of: 255

13 A500 V390 mOhmsn - channel30 V - 55 C+ 150 C195 Wthrough holeI2PAK - 3Tubesi1 channel30 V enhancement  
NTMYS8D0N04CTWG


MOSFET 40V 49A 8.1Ohm Single N-Channel
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USD 1.7096

Multiples of: 1

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