About MOSFETs

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJQ4403P_R2_00001


MOSFET /4403/TR/13"/HF/5K/DFN3333-8L/MOS/DFN/NFET-30FQMP//PJ/DFN33338L-AS09/PJQ4403P-AS76/DFN33338L-AS01
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panjit Availability : 48237
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USD 0.21

Multiples of: 1

35 A30 V15.5 mOhmsP - Channel 2.5 V- 55 C+ 150 C30 WSMD/SMTDFN3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
DMN63D8LDWQ-7


MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
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Diodes Incorporated Availability : 48162
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USD 0.0414

Multiples of: 1

220 mA30 V2.8 Ohms , 2.8 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V870 pC , 870 pCEnhancementAec - Q101 
IPD25N06S4L30ATMA2


60V 25A 29W 30mO@25A,10V N Channel TO-252-3-11 MOSFETs ROHS
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Infineon Availability : 48125
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USD 0.4485

Multiples of: 1

   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
DMT3006LFDF-7


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated Availability : 47927
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USD 0.1656

Multiples of: 1

         Smd/SmtU - DFN2020 - F - 6Cut TapeSi      
SI4590DY-T1-GE3


MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR
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Vishay Availability : 47915
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USD 0.3554

Multiples of: 1

           Cut TapeSi     Trenchfet
BSP317PH6327XTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
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Infineon Availability : 47899
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USD 0.3071

Multiples of: 1

            Sipmos      
SI7414DN-T1-GE3


Vishay Semiconductors MOSFET 60V 8.7A 3.8W 25mohm 10V
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Vishay Availability : 47886
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USD 0.8798

Multiples of: 1

5.6 A60 V25 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtPOWERPAK - 1212 - 8ReelSi 20 V Enhancement Trenchfet/Powerpak
TPH4R606NH,L1Q(M


Trans MOSFET N-CH Si 60V 85A 8-Pin SOP Advance
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Toshiba Availability : 47732
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USD 1.2438

Multiples of: 1

                   
SI7414DN-T1-E3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
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Vishay Availability : 47671
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USD 0.8798

Multiples of: 1

5.6 A60 V25 mOhmsN - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel10 V16 nCEnhancement Trenchfet/Powerpak
SI2324DS-T1-GE3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay Availability : 47529
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USD 0.2001

Multiples of: 1

         Smd/SmtSOT - 23 - 3Cut TapeSi     Trenchfet
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