About SiC MOSFETs

On Semiconductor SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NVBG015N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12mohm, 650V, M2, D2PAK-7L Silicon Carbide MOSFET, N-Channel, 650V, 12 mohm, D2PAK-7L
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ON Semiconductor Availability : 3084
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USD 77.5021

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V145 A18 mOhms- 8 V , + 22 V4.3 V283 nC- 55 C+ 175 C500 WEnhancement EliteSiC
NVHL160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 2565
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USD 6.9775

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C119 WEnhancement EliteSiC
NTBL060N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 1932
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USD 4.8965

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V46 A70 mOhms- 8 V , + 22.6 V4.3 V74 nC- 55 C+ 170 C170 WEnhancement EliteSiC
NTH4L020N090SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
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ON Semiconductor Availability : 1710
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USD 20.5749

Multiples of: 1

Through Hole N - Channel1 Channel900 V118 A28 mOhms- 8 V , + 22 V4.3 V196 nC- 55 C+ 175 C484 WEnhancement EliteSiC
NTBL045N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 1634
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USD 7.2335

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V73 A50 mOhms- 8 V , + 22 V4.3 V105 nC- 55 C+ 175 C348 WEnhancement EliteSiC
NTBG025N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 1548
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USD 17.052

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V106 A28.5 mOhms- 8 V , + 22 V4.3 V164 nC- 55 C+ 175 C395 WEnhancement EliteSiC
NVBG070N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 1541
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USD 14.145

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV25 A87 mOhms- 10 V , + 22 V4.4 V57 nC- 55 C+ 175 C172 WEnhancement EliteSiC
NVBG075N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 56 mohm, 650 V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 1531
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USD 8.6416

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V37 A85 mOhms- 8 V , + 22 V4.3 V59 nC- 55 C+ 175 C139 WEnhancement EliteSiC
NVH4L022N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 1500
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USD 62.0429

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV68 A30 mOhms- 10 V , + 22 V4.4 V151 nC- 55 C+ 175 C352 WEnhancement EliteSiC
NTH4L022N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 9
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USD 18.6245

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV68 A30 mOhms- 10 V , + 22 V4.4 V151 nC- 55 C+ 175 C352 WEnhancement EliteSiC
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