About SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
Manufacturer
Global Stock ⓘ (▲▼)Price(USD

(Ex. GST)(▲▼)
Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
IMZ120R140M1HXKSA1


N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-4-1
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Infineon Availability : 382
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USD 8.3877

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV19 A182 mOhms- 7 V , + 23 V5.7 V13 nC- 55 C+ 150 C94 WEnhancement CoolSiC
IMZ120R090M1HXKSA1


N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1
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Infineon Availability : 343
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USD 9.849

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV26 A117 mOhms- 7 V , + 23 V5.7 V21 nC- 55 C+ 150 C115 WEnhancement CoolSiC
SCT10N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm
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STMicroelectronics Availability : 318
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USD 8.3583

Multiples of: 1

Through Hole N - Channel1 Channel1200 V12 A500 mOhms25 V1.8 V22 nC- 55 C+ 200 C150 WEnhancement Hip247â ¢
SCTW35N65G2V


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 45 A
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STMicroelectronics Availability : 246
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USD 14.4301

Multiples of: 1

Through Hole N - Channel1 Channel650 V45 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 200 C240 WEnhancement  
NTBG023N065M3S


SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S
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ON Semiconductor Availability : 0
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USD 7.2113

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V40 A33 mOhms- 8 V , + 22 V4 V69 nC- 55 C+ 175 C263 WEnhancement  
G3F45MT06D


SiC MOSFETs 650V 40mohm TO-247-3 G3F SiC MOSFET
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GeneSiC Semiconductor Availability : 0
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USD 8.4358

Multiples of: 1

Through Hole N - Channel1 Channel650 V52 A40 mOhms      Enhancement  
G3F45MT06K


SiC MOSFETs 650V 40mohm TO-247-4 G3F SiC MOSFET
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GeneSiC Semiconductor Availability : 0
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USD 8.7203

Multiples of: 1

Through Hole N - Channel1 Channel650 V52 A40 mOhms      Enhancement  
NTHL023N065M3S


SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S
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USD 8.8069

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A18 mOhms- 8 V , + 22 V4 V262 nC- 55 C+ 175 C263 WEnhancement  
NTH4L023N065M3S


SiC MOSFETs SIC MOS TO247-4L 23MOHM 650V M3S
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USD 8.9924

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A33 mOhms- 8 V , + 22 V4 V69 nC- 55 C+ 175 C245 WEnhancement  
NTHL060N090SC1


SiC MOSFETs 60MOHM 900V
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USD 9.2075

Multiples of: 1

Through Hole N - Channel1 Channel900 V46 A84 mOhms- 8 V , + 22 V4.3 V87 nC- 55 C+ 175 C221 WEnhancement EliteSiC
SCT055W65G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
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STMicroelectronics Availability : 0
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USD 9.4378

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A72 mOhms- 18 V , + 18 V4.2 V32 nC- 55 C+ 200 C210 WEnhancement  
SCT10N120AG


SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
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STMicroelectronics Availability : 0
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USD 9.9717

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV12 A500 mOhms- 10 V , + 25 V3.5 V22 nC- 55 C+ 200 C150 WEnhancementAEC - Q101 
G3F33MT06K


SiC MOSFETs 650V 27mohm TO-247-4 G3F SiC MOSFET
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GeneSiC Semiconductor Availability : 0
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USD 10.0562

Multiples of: 1

Through Hole N - Channel1 Channel650 V70 A27 mOhms      Enhancement  
SCTH40N120G2V7AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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STMicroelectronics Availability : 0
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USD 10.1106

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV33 A105 mOhms- 10 V , + 22 V5 V63 nC- 55 C+ 175 C250 WEnhancementAEC - Q101 
NTBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
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ON Semiconductor Availability : 0
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USD 10.1949

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancement EliteSiC
IMW120R040M1HXKSA1


SiC MOSFETs Y
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Infineon Availability : 0
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USD 10.3902

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV55 A39 mOhms- 10 V , + 23 V4.2 V39 nC- 55 C+ 150 C227 WEnhancement  
NTHL080N120SC1A


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
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ON Semiconductor Availability : 0
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USD 11.2445

Multiples of: 30

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancement EliteSiC
IMZA65R020M2HXKSA1


SiC MOSFETs Y
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Infineon Availability : 0
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USD 12.2568

Multiples of: 1

Through Hole N - Channel1 Channel650 V83 A24 mOhms- 7 V , + 23 V5.6 V57 nC- 55 C+ 175 C273 WEnhancement CoolSiC
SCT20N120H


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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STMicroelectronics Availability : 0
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USD 12.3242

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV20 A239 mOhms- 10 V , + 25 V3.5 V45 nC- 55 C+ 175 C175 WEnhancement  
TW060N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm
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Toshiba Availability : 0
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USD 13.3355

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A182 mOhms- 10 V , + 25 V5 V46 nC- 55 C+ 175 C170 WEnhancement  
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