SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 m typ., 33 A in an HPAK-7 package Features TAB V R max. I Order code DS DS(on) D SCTH40N120G2V7AG 1200 V 105 m 33 A 7 1 AEC-Q101 qualified Very fast and robust intrinsic body diode 2 H PAK-7 Extremely low gate charge and input capacitance Source sensing pin for increased efficiency Drain (TAB) Applications Main inverter (electric traction) DC/DC converter for EV/HEV Gate (1) On board charger (OBC) Driver source (2) Description Power source (3, 4, 5, 6, 7) This silicon carbide Power MOSFET device has been developed using STs N-chG1DS2PS34567DTAB nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH40N120G2V7AG Product summary Order code SCTH40N120G2V7AG Marking 40N120AG Package HPAK-7 Packing Tape and reel DS12969 - Rev 3 - November 2021 www.st.com For further information contact your local STMicroelectronics sales office.SCTH40N120G2V7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 V V GS Gate-source voltage (pulsed, t = 25 ns repetitive overshoot during switching p -11 to 25 for an accumulated time of 10 h) Drain current (continuous) at T = 25 C 33 C I A D Drain current (continuous) at T = 100 C 23 C (1) I Drain current (pulsed) 92 A DM P Total power dissipation at T = 25 C 250 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.6 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS12969 - Rev 3 page 2/14