AS29CF160T-55TIN AS29CF160B-55TIN 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only - PARALLEL NOR FLASH Revision History Issue Date Remark Rev. No. History Preliminary 1.0 Initial issue July 15, 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 41 - Rev.1.0 July 2019AS29CF160T-55TIN AS29CF160B-55TIN Parallel NOR Flash - 2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only Features Single power supply operation Minimum 100,000 program/erase cycles per sector - Full voltage range: 4.5 to 5.5 volt for read and write 20-year data retention at 125C operations - Reliable operation for the life of the system Access time: CFI (Common Flash Interface) compliant - 55ns (max.) - Provides device-specific information to the system, Current: allowing host software to easily reconfigure for different - 20mA typical active read current Flash devices - 30mA typical program/erase current Compatible with JEDEC-standards - Pinout and software compatible with single-power-supply - 6uA typical CMOS standby ( = VCC or Float) WP Flash memory standard Flexible sector architecture - Superior inadvertent write protection - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX31 sectors - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX31 sectors Data Polling and toggle bits - Any combination of sectors can be erased - Provides a software method of detecting completion of - Supports full chip erase program or erase operations - Sector protection: Ready / BUSY pin (RY / BY ) A hardware method of protecting sectors to prevent any - Provides a hardware method of detecting completion of inadvertent program or erase operations within that program or erase operations sector. Temporary Sector Unprotect feature allows code Erase Suspend/Erase Resume changes in previously locked sectors - Suspends a sector erase operation to read data from, or Industrial operating temperature range: -40C to +85C program data to, a non-erasing sector, then resumes the Unlock Bypass Program Command erase operation - Reduces overall programming time when issuing Hardware reset pin (RESET ) multiple program command sequence - Hardware method to reset the device to reading array Top or bottom boot block configurations available data Embedded Algorithms WP input pin (48 pins TSOP) - Embedded Erase algorithm will automatically erase the - At V , protects the 16Kbyte boot sector from erasure IL entire chip or any combination of designated sectors and regardless of sector protect/unprotect status. verify the erased sectors - At V , allows removal of boot sector protection. IH - Embedded Program algorithm automatically writes and Package options verifies data at specified addresses - 48-pin TSOP (I) - All Pb-free (Lead-free) products are RoHS2.0 compliant General Description The AS29CF160T/B-55TIN is a 16Mbit, 5.0 volt-only has separate chip enable ( CE ), write enable ( WE ) and Flash memory organized as 2,097,152 bytes of 8 bits or output enable ( OE ) controls. 1,048,576 words of 16 bits each. The 8 bits of data appear The device requires only a single 5.0 volt power supply for on I/O0 - I/O7 the 16 bits of data appear on I/O0~I/O15. both read and write functions. Internally generated and This is offered in 48-Pin TSOP package. This device is regulated voltages are provided for the program and erase designed to be programmed in-system with the standard operations. system 5.0 volt VCC supply. Additional 12.0 volt VPP is The AS29CF160T/B-55TIN is entirely software command not required for in-system write or erase operations. set compatible with the JEDEC single-power-supply However, the AS29CF160T/B-55TIN can also be Flash standard. Commands are written to the programmed in standard EPROM programmers. command register using standard microprocessor write The AS29CF160T/B-55TIN has the first toggle bit, I/O6, timings. Register contents serve as input to an internal which indicates whether an Embedded Program or Erase is state-machine that controls the erase and programming in progress, or it is in the Erase Suspend. Besides the I/ circuitry. Write cycles also internally latch addresses and O6 toggle bit, the AS29CF160T/B-55TIN has a second data needed for the programming and erase operations. toggle bit, I/O2, to indicate whether the addressed sector Reading data out of the device is similar to reading from is being selected for erase. The AS29CF160T/B-55TIN other Flash or EPROM devices. also offers the ability to program in the Erase Suspend Device programming occurs by writing the proper program mode. The standard AS29CF160T/B-55TIN offers access command sequence. This initiates the Embedded Program time of 55ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device Confidential - 2 of 41 - Rev.1.0 July 2019