AO4435 30V P-Channel MOSFET General Description Product Summary The AO4435 uses advanced trench technology to V = -30V DS provide excellent R , and ultra-low low gate charge I = -10.5A (V = -20V) DS(ON) D GS with a 25V gate rating. This device is suitable for use as R < 14m (V = -20V) DS(ON) GS a load switch or in PWM applications. R < 18m (V = -10V) DS(ON) GS R < 36m (V = -5V) DS(ON) GS -RoHS Compliant -AO4435 is Halogen Free 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 25 V GS T =25C Continuous Drain -10.5 A A T =70C I Current -8 A A D B Pulsed Drain Current I -80 DM T =25C 3.1 A A P W Power Dissipation D T =70C 2.0 A B Avalanche Current I -20 A AR B Repetitive avalanche energy 0.3mH E 60 mJ AR Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 32 40 C/W R JA A Maximum Junction-to-Ambient Steady State 60 75 C/W C R 17 24 C/W Maximum Junction-to-Lead Steady State JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4435 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I = -250A, V = 0V BV Drain-Source Breakdown Voltage -30 V D GS DSS V = -30V, V = 0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C -5 J V = 0V, V = 25V I Gate-Body leakage current 100 nA GSS DS GS V = V I = -250A V Gate Threshold Voltage -1.7 -2.3 -3 V DS GS D GS(th) I On state drain current V = -10V, V = -5V -80 A GS DS D(ON) V = -20V, I = -11A 11 14 GS D T =125C 15 19 J R Static Drain-Source On-Resistance m DS(ON) V = -10V, I = -10A 15 18 GS D V = -5V, I = -5A 27 36 GS D V = -5V, I = -10A g Forward Transconductance 22 S FS DS D I = -1A,V = 0V V Diode Forward Voltage -0.74 -1 V S GS SD I Maximum Body-Diode Continuous Current -3.5 A S DYNAMIC PARAMETERS C Input Capacitance 1130 1400 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 240 pF GS DS oss C Reverse Transfer Capacitance 155 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 5.8 8 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 18 24 nC g(10V) Q Total Gate Charge 9.5 g(4.5V) V =-10V, V =-15V, I =-10A GS DS D Q Gate Source Charge 5.5 nC gs Q Gate Drain Charge 3.3 nC gd t Turn-On DelayTime 8.7 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =1.5, 8.5 ns r GS DS L R =3 t Turn-Off DelayTime 18 ns GEN D(off) t Turn-Off Fall Time 7 ns f t I =-10A, dI/dt=100A/s 25 30 rr Body Diode Reverse Recovery Time F ns Q I =-10A, dI/dt=100A/s 12 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T = 25C. JA A The value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. E and I ratings are based on low frequency and duty cycles to keep T =25C. AR AR j Rev7: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com