AO4437 12V P-Channel MOSFET General Description Product Summary The AO4437 uses advanced trench technology to provide V (V) = -12V DS excellent R , low gate charge and operation with gate I = -11 A (V = -4.5V) DS(ON) D GS voltages as low as 1.8V. This device is suitable for use as a R < 16m (V = -4.5V) DS(ON) GS load switch or in PWM applications. It is ESD protected. R < 20m (V = -2.5V) DS(ON) GS R < 25m (V = -1.8V) DS(ON) GS ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -12 V DS Gate-Source Voltage V 8 V GS T =25C -11 Continuous Drain A A Current T =70C I -9 A A D B Pulsed Drain Current I -20 DM T =25C 3 A P W D A T =70C Power Dissipation 2.1 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 31 40 C/W R JA A Steady-State Maximum Junction-to-Ambient 63 75 C/W C Steady-State R 21 30 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd.AO4437 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -12 V D GS DSS V =-9.6V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =4.5V 1 A DS GS I Gate-Body leakage current GSS V =0V, V =8V 10 A DS GS V Gate Threshold Voltage V =V I =-250A -0.3 -0.55 -1 DS GS D GS(th) V =-4.5V, V =-5V I On state drain current -20 A GS DS D(ON) V =-4.5V, I =-11A 12.4 16 GS D m T =125C 17 21 J R Static Drain-Source On-Resistance DS(ON) V =-2.5V, I =-10A 15.9 20 m GS D V =-1.8V, I =-6A 20.4 25 m GS D V =-5V, I =-11A g Forward Transconductance 38 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.74 -1 V S GS SD I Maximum Body-Diode Continuous Current -4.5 A S DYNAMIC PARAMETERS C Input Capacitance 3960 4750 pF iss V =0V, V =-6V, f=1MHz C Output Capacitance 910 pF GS DS oss C Reverse Transfer Capacitance 757 pF rss V =0V, V =0V, f=1MHz R Gate resistance 6.9 8.5 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 37 47 nC g V =-4.5V, V =-6V, I =-11A Q Gate Source Charge 4.5 nC GS DS D gs Q Gate Drain Charge 11 nC gd t Turn-On Delay Time 15 ns D(on) t Turn-On Rise Time V =-4.5V, V =-6V, R =0.55, 43 ns r GS DS L R =3 t Turn-Off Delay Time 158 ns GEN D(off) t Turn-Off Fall Time 95 ns f t I =-11A, dI/dt=100A/s 64 rr Body Diode Reverse Recovery Time F ns Q I =-11A, dI/dt=100A/s 50 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. JA A The value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A SOA curve provides a single pulse rating. Rev3: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd.