AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology V (V) = 20V -20V DS MOSFETs to provide excellent R and low gate I = 7.3A (V =4.5V) -5A (V =-4.5V) DS(ON) D GS GS charge. The complementary MOSFETs may be used R R DS(ON) DS(ON) to form a level shifted high side switch, and for a < 23m (V =10V) < 53m (V = -4.5V) GS GS host of other applications. < 30m (V =4.5V) < 87m (V = -2.5V) GS GS < 84m (V =2.5V) GS 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested SOIC-8 D1 D2 Top View Bottom View Top View S1 D1 G1 D1 S2 D2 G1 G2 G2 D2 S1 S2 Pin1 n-channel p-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 20 -20 V DS Gate-Source Voltage V 16 12 V GS T =25C 7.3 -5 Continuous Drain A AF T =70C I A Current 6.2 -4.2 A D B Pulsed Drain Current I 35 -25 DM T =25C 2 2 A P W D T =70C Power Dissipation 1.44 1.44 A B Avalanche Current I 13 13 A AR B Repetitive avalanche energy 0.3mH E 25 25 mJ AR Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units A t 10s Maximum Junction-to-Ambient n-ch 48 62.5 C/W R A JA Steady-State Maximum Junction-to-Ambient n-ch 74 110 C/W C Steady-State R n-ch 35 40 C/W Maximum Junction-to-Lead JL A Maximum Junction-to-Ambient t 10s p-ch 48 62.5 C/W R JA A Maximum Junction-to-Ambient Steady-State p-ch 74 110 C/W C Steady-State Maximum Junction-to-Lead R p-ch 35 40 C/W JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4622 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 20 V DSS D GS V =16V, V =0V 1 DS GS I Zero Gate Voltage Drain Current uA DSS T =55C 5 J I Gate-Body leakage current V =0V, V =16V 100 nA GSS DS GS V =V I =250A V Gate Threshold Voltage 0.6 1.25 2 V GS(th) DS GS D V =4.5V, V =5V I On state drain current 35 A GS DS D(ON) V =10V, I =7.3A 19 23 GS D m T =125C 28 33.6 J R Static Drain-Source On-Resistance DS(ON) V =4.5V, I =6.4A 24 30 m GS D V =2.5V, I =2A 67 84 m GS D g Forward Transconductance V =5V, I =7.3A 17 S FS DS D I =1A V Diode Forward Voltage 0.7 1 V SD S I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 900 1100 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 162 pF GS DS oss C Reverse Transfer Capacitance 105 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.9 1.35 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 15 18 nC g Q (4.5V) Total Gate Charge 7.2 9 nC g V =10V, V =10V, I =6.5A GS DS D Q Gate Source Charge 1.8 nC gs Q Gate Drain Charge 2.8 nC gd t Turn-On DelayTime 4.5 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =1.4, 9.2 ns r GS DS L R =3 t Turn-Off DelayTime 18.7 ns D(off) GEN t Turn-Off Fall Time 3.3 ns f t I =7.3A, dI/dt=100A/s 18 rr Body Diode Reverse Recovery Time F ns Q I =7.3A, dI/dt=100A/s 9.5 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. R and R are equivalent terms referring to JA JL JL JC thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev5: Nov 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com