AO4718
30V N-Channel MOSFET
TM
SRFET
General Description Features
TM
SRFET The AO4718 uses advanced trench
V (V) = 30V
technology with a monolithically integrated DS
I =15A (V = 10V)
Schottky diode to provide excellent R ,and
D GS
DS(ON)
low gate charge. This device is suitable for use R < 9m (V = 10V)
DS(ON) GS
as a low side FET in SMPS, load switching and
R < 14m (V = 4.5V)
DS(ON) GS
general purpose applications.
100% UIS Tested
100% Rg Tested
SOIC-8
Top View Bottom View D
D
D
TM
D
SRFET
D
Soft Recovery MOSFET:
Integrated Schottky Diode
G
G
S
S
S
S
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
Drain-Source Voltage V 30
DS
V
Gate-Source Voltage V 20
GS
T =25C
Continuous Drain 15
A
AF
Current T =70C I 12
A DSM
A
B
Pulsed Drain Current I 80
DM
B
Avalanche Current I , I 25
AS AR
B
Avalanche energy L=0.3mH E , E 94 mJ
AS AR
T =25C 3.1
A
P
W
D
T =70C
Power Dissipation 2.0
A
Junction and Storage Temperature Range T , T -55 to 150 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s 32 40 C/W
R
A JA
Maximum Junction-to-Ambient Steady-State 60 75 C/W
C
Maximum Junction-to-Lead Steady-State
R 17 24 C/W
JL
Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4718
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =250uA, V =0V 30 V
D GS
DSS
V =30V, V =0V 0.1
DS GS
I
Zero Gate Voltage Drain Current mA
DSS
T =125C 10
J
V =0V, V = 20V
I Gate-Body leakage current 0.1 A
GSS DS GS
V V =V I =250A 1.3 1.65 2.5 V
Gate Threshold Voltage
GS(th) DS GS D
I On state drain current V =10V, V =5V 80 A
GS DS
D(ON)
V =10V, I =15A
7.3 9
GS D
m
R
Static Drain-Source On-Resistance T =125C 10.3 13
DS(ON)
J
V =4.5V, I =12A
10.8 14 m
GS D
g Forward Transconductance V =5V, I =15A 43 S
FS DS D
V Diode Forward Voltage I =1A,V =0V 0.41 0.5 V
S GS
SD
I Maximum Body-Diode + Schottky Continuous Current 4 A
S
DYNAMIC PARAMETERS
C Input Capacitance 1620 1950 pF
iss
C Output Capacitance V =0V, V =15V, f=1MHz 382 pF
GS DS
oss
C Reverse Transfer Capacitance 162 pF
rss
V =0V, V =0V, f=1MHz
R Gate resistance 1.2 1.8
GS DS
g
SWITCHING PARAMETERS
Q (10V) Total Gate Charge 24.7 32 nC
g
Q (4.5V) Total Gate Charge 12 16 nC
g
V =10V, V =15V, I =15A
GS DS D
Q Gate Source Charge 4.0 nC
gs
Q Gate Drain Charge 5.6 nC
gd
t Turn-On DelayTime 6.3 ns
D(on)
V =10V, V =15V, R =1,
t Turn-On Rise Time 9.3 ns
r GS DS L
t Turn-Off DelayTime R =3 21.6 ns
GEN
D(off)
t Turn-Off Fall Time 5.4 ns
f
t I =15A, dI/dt=300A/s 19
rr Body Diode Reverse Recovery Time F 23 ns
Q I =15A, dI/dt=300A/s
36.4 nC
rr Body Diode Reverse Recovery Charge F
A: The value of R is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
JA
T =25C. The value in any given application depends on the user's specific board design.
A
B: Repetitive rating, pulse width limited by junction temperature.
C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient.
JA JL
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA
A
curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
Rev3: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com