AO6405 30V P-Channel MOSFET General Description Product Summary V -30V The AO6405 uses advanced trench technology to provide DS excellent R with low gate charge. This device is I (at V =10V) -5A DS(ON) D GS suitable for use as a load switch or in PWM applications. R (at V =10V) < 52m DS(ON) GS R (at V = 4.5V) < 87m DS(ON) GS TTSSOOPP66 DD TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww DD 66 11 DD DD DD 22 55 GG GG 33 44 SS SS PPiinn11 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DDSS Gate-Source Voltage V 20 V GS T =25C -5 A Continuous Drain I D T =70C Current -4.2 A A C Pulsed Drain Current I -20 DM T =25C 2 A P W D B Power Dissipation T =70C 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 47.5 62.5 C/W R A D JA Maximum Junction-to-Ambient Steady-State 74 110 C/W Maximum Junction-to-Lead Steady-State R 37 50 C/W JL Rev 5: Nov 2011 www.aosmd.com Page 1 of 5 AO6405 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250A -1.4 -1.9 -2.4 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -20 A GS DS D(ON) V =-10V, I =-5A 34 52 GS D m R Static Drain-Source On-Resistance T =125C 52 70 DS(ON) J V =-4.5V, I =-4A 54 87 m GS D g Forward Transconductance V =-5V, I =-5A 10 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V S GS SD I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 520 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 100 pF oss GS DS C Reverse Transfer Capacitance 65 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3.5 7.5 11.5 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 9.2 11 nC g Q (4.5V) Total Gate Charge 4.6 6 nC g V =-10V, V =-15V, I =-5A GS DS D Q Gate Source Charge 1.6 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 7.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, RR ==33,, 55..55 nnss r GS DS L R =3 t Turn-Off DelayTime 19 ns D(off) GEN t Turn-Off Fall Time 7 ns f t I =-5A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 11 ns Q I =-5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 5.3 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Nov 2011 www.aosmd.com Page 2 of 5