AO6808 20V Dual N-Channel MOSFET General Description Product Summary The AO6808 uses advanced trench technology to provide excellent V = 20V DS R , low gate charge and operation with gate voltages as low as I = 6A (V = 4.5V) DS(ON) D GS 2.5V. This device is suitable for use as a load switch. It is ESD R = 19m (typical) (V = 4.5V) DS(ON) GS protected. R = 20m (typical) (V = 4.0V) DS(ON) GS R = 21m (typical) (V = 3.1V) DS(ON) GS R = 23m (typical) (V = 2.5V) DS(ON) GS D2 TSOP6 D1 Top View Bottom View Top View S1 1 6 G1 G1 G2 D1/D2 2 5 D1/D2 S2 3 G2 4 Pin S2 S1 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr Symbol 10 Sec Steady State UUnniittss Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C 6 4.6 Continuous Drain A A T =70C I A Current 4.6 3.7 A D B Pulsed Drain Current I 60 DM T =25C 1.3 0.8 A A P W Power Dissipation D T =70C 0.8 0.5 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 76 95 C/W R JA A Maximum Junction-to-Ambient Steady State 118 150 C/W C Steady State R 54 68 C/W Maximum Junction-to-Lead JL Rev.1.0: February 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I = 250A, V = 0V 20 V DSS D GS V = 20V, V = 0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C 5 J V = 0V, V = 10V I Gate-Body leakage current 10 A DS GS GSS V = V I = 250A V Gate Threshold Voltage 0.5 0.75 1 V GS(th) DS GS D I On state drain current V = 4.5V, V = 5V 60 A D(ON) GS DS V = 4.5V, I = 6.0A 15 19 23 GS D m T =125C 21 27 33 J R V = 4.0V, I = 5.5A Static Drain-Source On-Resistance 15 20 25 m DS(ON) GS D V = 3.1V, I = 5A 16 21 27 m GS D V = 2.5V, I = 2A 17 23 30 m GS D g Forward Transconductance V = 5V, I = 6.0A 34 S FS DS D V Diode Forward Voltage I = 1A,V = 0V 0.65 1 V S GS SD I Maximum Body-Diode Continuous Current 1.3 A S DYNAMIC PARAMETERS C Input Capacitance 620 780 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 125 pF GS DS oss C Reverse Transfer Capacitance 64 pF rss SWITCHING PARAMETERS Q (10V) Total Gate Charge 16.2 21 nC g Q (4.5V) Total Gate Charge 7.7 10 nC g V = 10V, V = 10V, I = 6A GS DS D QQ GGaattee SSoouurrccee CChhaarrggee 11..55 nnCC ggss Q Gate Drain Charge 2.7 nC gd t Turn-On DelayTime 236 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =1.7, 448 ns r GS DS L t Turn-Off DelayTime R =3 9.5 s GEN D(off) t Turn-Off Fall Time 4.1 s f t I =6A, dI/dt=100A/s 25 33 rr Body Diode Reverse Recovery Time F ns Q I =6A, dI/dt=100A/s 9 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T = 25 C. in JA A any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv..11..00:: FFeebbrruuaarryy 22001144 wwwwww..aaoossmmdd..ccoomm PPaaggee 11 ooff 55