AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to V (V) = -12V DS provide excellent R , low gate charge and I = -6.5 A (V = -4.5V) DS(ON) D GS operation with gate voltages as low as 1.8V. This R < 20m (V = -4.5V) DS(ON) GS device is suitable for use as a load switch. R < 24m (V = -2.5V) DS(ON) GS R < 30m (V = -1.8V) DS(ON) GS - RoHS Compliant -Halogen Free ESD Protected D1 D2 TSSOP-8 Top View D2 D1 1 8 Rg Rg S1 2 7 S2 G1 G2 3 6 S1 S2 4 5 G1 G2 S1 S2 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -12 V DS Gate-Source Voltage V 8 V GS =25C -6.5 T A Continuous Drain Current A T =70C I -5 A D C Pulsed Drain Current I -60 DM T =25C 1.4 A P W B D Power Dissipation T =70C 0.9 A T , T Junction and Storage Temperature Range -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 73 90 C/W R JA AD Steady-State Maximum Junction-to-Ambient 96 125 C/W Maximum Junction-to-Lead Steady-State R 63 75 C/W JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO8807L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -12 V DSS D GS V =-12V, V =0V -1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C -5 J A I Gate-Body leakage current V =0V, V =8V 10 GSS DS GS V Gate Threshold Voltage V =V I =-250A -0.35 -0.53 -0.85 GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -60 A D(ON) GS DS V =-4.5V, I =-6.5A 16 20 GS D m T =125C 23 28 J m R Static Drain-Source On-Resistance V =-2.5V, I =-6A 19 24 DS(ON) GS D m V =-1.8V, I =-5.5A 23 30 GS D m V =-1.5V, I =-5A 28 36 GS D g Forward Transconductance V =-5V, I =-6.5A 45 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.56 -1 V SD S GS I Maximum Body-Diode Continuous Current -1.4 A S DYNAMIC PARAMETERS C Input Capacitance 1740 2100 pF iss V =0V, V =-6V, f=1MHz C Output Capacitance 334 pF oss GS DS C Reverse Transfer Capacitance 200 pF rss k R Gate resistance V =0V, V =0V, f=1MHz 1.3 1.7 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 19 23 nC g Q V =-4.5V, V =-6V, I =-6.5A Gate Source Charge 4.5 nC gs GS DS D Q Gate Drain Charge 5.3 nC gd t Turn-On Delay Time 240 ns D(on) t Turn-On Rise Time V =-4.5V, V =-6V, R =0.9 , 580 ns r GS DS L s t R =3 Turn-Off Delay Time 7 D(off) GEN s t Turn-Off Fall Time 4.2 f t I =-6.5A, dI/dt=100A/ s 22 27 rr Body Diode Reverse Recovery Time F ns Q I =-6.5A, dI/dt=100A/ s 17 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) Rev0 : July 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com