AO8822 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary V 20V The AO8822 uses advanced trench technology to provide DS excellent R , low gate charge and operation with gate I (at V =10V) 7A DS(ON) D GS voltages as low as 1.8V while retaining a 12V V GS(MAX) R (at V =10V) < 18m DS(ON) GS rating. This device is suitable for use as a uni-directional R (at V = 4.5V) < 22m DS(ON) GS or bi-directional load switch, facilitated by its common- R (at V = 3.6V) < 23m DS(ON) GS drain configuration. R (at V = 2.5V) < 27m DS(ON) GS ESD Protected TSSOP8 D D Top View Bottom View D1/D2 D1/D2 1 8 S1 2 7 S2 3 6 G G S1 S2 5 4 G1 G2 S S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C 7 A Continuous Drain I D Current T =70C 6 A A C Pulsed Drain Current I 30 DM T =25C 1.5 A P W D B T =70C Power Dissipation 1 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 63 83 C/W R JA A D Maximum Junction-to-Ambient Steady-State 101 130 C/W Maximum Junction-to-Lead Steady-State R 64 83 C/W JL Rev 6 : March 2011 www.aosmd.com Page 1 of 5 AO8822 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V D GS DSS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 10V I Gate-Body leakage current 10 A GSS DS GS V =0V, I =250A BV Gate-Source Breakdown Voltage 12 V GSO DS G V Gate Threshold Voltage V =V I =250A 0.5 0.8 1 V GS(th) DS GS D I On state drain current V =10V, V =5V 30 A D(ON) GS DS V =10V, I =7A 13 15 18 GS D m T =125C 22 27 J V =4.5V, I =6.6A 15 17 22 m GS D R Static Drain-Source On-Resistance DS(ON) V =3.6V, I =6A 16 18 23 m GS D V =2.5V, I =5.5A 18 21 27 m GS D V =1.8V, I =2A 28 m GS D V =5V, I =7A g Forward Transconductance 31 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 2 A S DYNAMIC PARAMETERS C Input Capacitance 520 650 780 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 140 pF oss GS DS C Reverse Transfer Capacitance 60 pF rss SWITCHING PARAMETERS Q (10V) Total Gate Charge 12 15 18 nC g Q (4.5V) Total Gate Charge 5 6.7 8 nC g V =10V, V =10V, I =7A GS DS D Q Gate Source Charge 3.6 nC gs Q Gate Drain Charge 3 nC gd t Turn-On DelayTime 0.25 us D(on) t Turn-On Rise Time V =10V, V =10V, R =1.5, 0.45 us r GS DS L t Turn-Off DelayTime R =3 11 us GEN D(off) t Turn-Off Fall Time 4 us f t I =7A, dI/dt=500A/s 8 rr Body Diode Reverse Recovery Time F 10 12 ns Q I =7A, dI/dt=500A/s 8 nC rr Body Diode Reverse Recovery Charge F 11 13.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6 : March 2010 www.aosmd.com Page 2 of 5