AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary V T 700V The AOT27S60& AOB27S60 & AOTF27S60 have been DS j,max TM fabricated using the advanced MOS high voltage I 110A DM process that is designed to deliver high levels of R 0.16 DS(ON),max performance and robustness in switching applications. Q 26nC g,typ By providing low R , Q and E along with DS(on) g OSS E 400V 6J oss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT27S60L & AOB27S60L & AOTF27S60L Top View TO-263 TO-220 TO-220F(3kVAC 1s) 2 D D PAK D G S S S D D G G S G AOT27S60 AOTF27S60 AOB27S60 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT27S60/AOB27S60 AOTF27S60 Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T =25C 27 27* C Continuous Drain I D T =100C Current 17 17* A C C Pulsed Drain Current I 110 DM C Avalanche Current I 7.5 A AR C Repetitive avalanche energy E 110 mJ AR G Single pulsed avalanche energy E 480 mJ AS T =25C 357 50 W C P D B o o Power Dissipation Derate above 25 C 2.9 0.4 W/ C MOSFET dv/dt ruggedness 100 dv/dt V/ns H 20 Peak diode recovery dv/dt Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering J purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOT27S60/AOB27S60 AOTF27S60 Units A,D R Maximum Junction-to-Ambient JA 65 65 C/W A R Maximum Case-to-sink CS 0.5 -- C/W Maximum Junction-to-Case R 0.35 2.5 C/W JC * Drain current limited by maximum junction temperature. www.aosmd.com Rev 5: Sep 2012 Page 1 of 6 AOT27S60/AOB27S60/AOTF27S60 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 - - D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 650 700 - V D GS J V =600V, V =0V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS V =480V, T =150C - 10 - DS J I Gate-Body leakage current V =0V, V =30V - - 100 n GSS DS GS V V =5V,I =250A Gate Threshold Voltage 2.5 3.3 4 V GS(th) DS D V =10V, I =13.5A, T =25C - 0.14 0.16 GS D J R Static Drain-Source On-Resistance DS(ON) V =10V, I =13.5A, T =150C - 0.38 0.44 GS D J V Diode Forward Voltage I =13.5A,V =0V, T =25C - 0.85 - V SD S GS J I Maximum Body-Diode Continuous Current - - 27 A S I Maximum Body-Diode Pulsed Current - - 110 A SM DYNAMIC PARAMETERS C Input Capacitance - 1294 - pF iss V =0V, V =100V, f=1MHz GS DS C Output Capacitance - 80 - pF oss Effective output capacitance, energy C - 69 - pF o(er) H related V =0V, V =0 to 480V, f=1MHz GS DS Effective output capacitance, time C - 221 - pF o(tr) I related V =0V, V =100V, f=1MHz C Reverse Transfer Capacitance - 2.3 - pF GS DS rss V =0V, V =0V, f=1MHz R Gate resistance - 4.7 - g GS DS SWITCHING PARAMETERS Q Total Gate Charge - 26 - nC g Q Gate Source Charge V =10V, V =480V, I =13.5A - 6.2 - nC GS DS D gs Q Gate Drain Charge - 8.8 - nC gd t Turn-On DelayTime - 31 - ns D(on) t Turn-On Rise Time V =10V, V =400V, I =13.5A, - 33 - ns GS DS D r R =25 t Turn-Off DelayTime G - 99 - ns D(off) t Turn-Off Fall Time - 34 - ns f t I =13.5A,dI/dt=100A/s,V =400V - 440 rr Body Diode Reverse Recovery Time F DS - ns I I =13.5A,dI/dt=100A/s,V =400V Peak Reverse Recovery Current - 28 rm F DS - A Q I =13.5A,dI/dt=100A/s,V =400V - 7.5 rr Body Diode Reverse Recovery Charge F DS - C A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. L=60mH, I =4A, V =150V, Starting T =25C AS DD J H. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS. I. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Sep 2012 www.aosmd.com Page 2 of 6