AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary V 30V Latest Trench Power AlphaMOS (MOS LV) technology DS Very Low RDS(on) at 4.5V GS I (at V =10V) 70A D GS Low Gate Charge R (at V =10V) < 2.6m DS(ON) GS High Current Capability R (at V =4.5V) < 4m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial TO252 TO-251A DPAK D IPAK Top View Bottom View TopView Bottom View D D G D G S D S G S D S D G G S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Units Symbol Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 VV GGSS T =25C 70 Continuous Drain C I D G Current T =100C 54 A C C Pulsed Drain Current I 280 DM T =25C 45 A Continuous Drain I A DSM T =70C Current 37 A C Avalanche Current I 45 A AS C Avalanche energy L=0.1mH E 101 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 60 C P W D B T =100C Power Dissipation 30 C T =25C 7.5 A P W DSM A T =70C Power Dissipation 5.2 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 16 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 41 50 C/W Maximum Junction-to-Case Steady-State R 1.9 2.5 C/W JC www.aosmd.com Rev 0: Feb. 2012 Page 1 of 6 AOD510/AOI510 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.7 2.2 V GS(th) DS GS, D V =10V, I =20A 2.1 2.6 GS D m R Static Drain-Source On-Resistance T =125C 2.7 3.3 DS(ON) J V =4.5V, I =20A 3.2 4 m GS D V =5V, I =20A g Forward Transconductance 85 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 70 A S DYNAMIC PARAMETERS C Input Capacitance 2719 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 1204 pF oss GS DS C Reverse Transfer Capacitance 169 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.9 2 3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 44 60 nC g Q (4.5V) Total Gate Charge 21 28 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 9 nC gs Q Gate Drain Charge 7 nC gd t Turn-On DelayTime 9.7 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 5.2 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3322..55 nnss D(off) GEN t Turn-Off Fall Time 10.3 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 19.6 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 42.7 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =175 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Feb. 2012 www.aosmd.com Page 2 of 6