AOD607
Complementary Enhancement Mode Field Effect Transistor
General Description Features
The AOD607 uses advanced trench n-channel p-channel
technology MOSFETs to provide V (V) = 30V -30V
DS
excellent R and low gate charge.
I = 12A (V =10V) -12A (V = -10V)
DS(ON)
D GS GS
The complementary MOSFETs may be
R R
DS(ON) DS(ON)
used in H-bridge, Inverters and other
< 25 m (V =10V) < 37 m (V = -10V)
GS GS
applications.
< 34 m (V =4.5V) < 62 m (V = -4.5V)
GS GS
100% UIS Tested!
-RoHS Compliant
-Halogen Free*
TO-252-4L
D-PAK D1/D2
Top View
Bottom View
Top View
D1/D2
Drain Connected
to Tab
G1 G2
S1 S2
G2
S2
n-channel p-channel
G1
S1
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage V 30 -30 V
DS
Gate-Source Voltage V 20 20 V
GS
Continuous Drain T =25C 12 -12
C
G
Current A
T =100C I 9.4 -9.4
C D
C
Pulsed Drain Current I 40 -40
DM
C
Avalanche Current
I 18 -18 A
AR
C
Repetitive avalanche energy L=0.1mH
E 40 40 mJ
AR
T =25C 25 25
C
P W
B D
Power Dissipation
T =100C 12.5 12.5
C
T =25C 2.1 2.1
A
P W
DSM
A
Power Dissipation
T =70C 1.3 1.3
A
Junction and Storage Temperature Range T , T -55 to 175 -55 to 175 C
J STG
Thermal Characteristics: n-channel and p-channel
Parameter Symbol Device Typ Max
A
t 10s
Maximum Junction-to-Ambient n-ch 19 23 C/W
R
JA
A
Steady-State
Maximum Junction-to-Ambient n-ch 47 60 C/W
B
Steady-State R n-ch 4.5 6 C/W
Maximum Junction-to-Case
JC
A
t 10s
Maximum Junction-to-Ambient p-ch 19 23 C/W
R
JA
A
Steady-State
Maximum Junction-to-Ambient p-ch 47 60 C/W
B
Steady-State R p-ch 4.5 6 C/W
Maximum Junction-to-Case JC
Alpha & Omega Semiconductor, Ltd. www.aosmd.comAOD607
N-Channel Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V
DSS D GS
V =24V, V =0V 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 5
J
V =0V, V = 20V
I Gate-Body leakage current 100 nA
GSS DS GS
V Gate Threshold Voltage V =V I =250A 1.5 1.7 2.5 V
GS(th) DS GS D
I On state drain current V =4.5V, V =5V 40 A
D(ON) GS DS
V =10V, I =12A 20 25
GS D
m
R
Static Drain-Source On-Resistance T =125C 28 34
DS(ON)
J
V =4.5V, I =5A
27.5 34 m
GS D
g Forward Transconductance V =5V, I =12A 25 S
FS DS D
V Diode Forward Voltage I =1A,V =0V 0.75 1 V
SD S GS
I Maximum Body-Diode Continuous Current 18 A
S
C
I Pulsed Body-Diode Current 40 A
SM
DYNAMIC PARAMETERS
C Input Capacitance 1040 1250 pF
iss
V =0V, V =15V, f=1MHz
C Output Capacitance 180 pF
GS DS
oss
C Reverse Transfer Capacitance 110 pF
rss
V =0V, V =0V, f=1MHz
R Gate resistance 0.7 1.5
GS DS
g
SWITCHING PARAMETERS
Q (10V) Total Gate Charge 19.8 25 nC
g
Q (4.5V) Total Gate Charge 9.8 12.5 nC
g
V =10V, V =15V, I =12A
GS DS D
Q Gate Source Charge 2.5 nC
gs
Q Gate Drain Charge 3.5 nC
gd
t Turn-On DelayTime 4.5 ns
D(on)
t Turn-On Rise Time V =10V, V =15V, R =1.25, 3.9 ns
r GS DS L
R =3
t Turn-Off DelayTime 17.4 ns
GEN
D(off)
t Turn-Off Fall Time 3.2 ns
f
t I =12A, dI/dt=100A/s
19 25
rr Body Diode Reverse Recovery Time F ns
Q I =12A, dI/dt=100A/s
8 nC
rr Body Diode Reverse Recovery Charge F
2
A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The
JA A
Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends
DSM JA
on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allow s it.
B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper
D J(MAX)
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T =175C.
J(MAX)
D. The R is the sum of the thermal impedence from junction to case R and case to ambient.
JA JC
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
2
F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA
A
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
ST
*This device is guaranteed green after data code 8X11 (Sep 1 2008).
Rev3: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com