AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to V (V) = 30V DS provide excellent R , low gate charge.This device I = 46A (V = 10V) DS(ON) D GS is suitable for use as a high side switch in SMPS and R < 10.5m (V = 10V) DS(ON) GS general purpose applications. R < 13.5m (V = 4.5V) DS(ON) GS -RoHS Compliant UIS Tested -Halogen and Antimony Free Green Device* Rg,Ciss,Coss,Crss Tested TM Ultra SO-8 Top View D D Bottom tab G connected to drain S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS T =25C 46 Continuous Drain C B T =100C I A Current 33 C D Pulsed Drain Current I 120 DM T =25C 10 Continuous Drain A A H T =70C I Current 8 A DSM C Avalanche Current I 30 A AR C Repetitive avalanche energy L=0.3mH E 135 mJ AR T =25C 43 C P W D B T =100C Power Dissipation 21 C T =25C 2 A P W DSM A T =70C Power Dissipation 1.2 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 24 30 C/W R JA A Steady-State Maximum Junction-to-Ambient 53 64 C/W C Steady-State R 2.4 3.5 C/W Maximum Junction-to-Case JC Alpha & Omega Semiconductor, Ltd. www.aosmd.comAOL1426 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current uA DSS T =55C 5 J V =0V, V = 12V I Gate-Body leakage current 0.1 A GSS DS GS V Gate Threshold Voltage V =V I =250A 1 1.55 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 120 A GS DS D(ON) V =10V, I =20A 8.5 10.5 GS D m R Static Drain-Source On-Resistance T =125C 14.5 18 DS(ON) J V =4.5V, I =20A 10.2 13.5 m GS D g Forward Transconductance V =5V, I =20A 40 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.73 1.0 V S GS SD I Maximum Body-Diode Continuous Current 46 A S DYNAMIC PARAMETERS C Input Capacitance 1210 1452 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 330 pF GS DS oss C Reverse Transfer Capacitance 85 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.2 1.6 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 22 28 nC g Q (4.5V) Total Gate Charge 10 13 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 3.7 nC gs Q Gate Drain Charge 2.7 nC gd t Turn-On DelayTime 10 ns D(on) V =10V, V =15V, R =0.75, t Turn-On Rise Time 6.3 ns r GS DS L t Turn-Off DelayTime R =3 21 ns GEN D(off) t Turn-Off Fall Time 2.8 ns f t I =20A, dI/dt=100A/s 36 rr Body Diode Reverse Recovery Time F 45 ns Q I =20A, dI/dt=100A/s 47 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. 2 H. Surface mounted on a 1 in FR-4 board with 2oz. Copper. ST * This device is guaranteed green after date code 8P11 (June 1 2008) Rev5: Dec 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com