AOL1448
30V N-Channel MOSFET
General Description Product Summary
V 30V
The AOL1448 uses advanced trench technology to DS
provide excellent R with low gate charge.
I (at V =10V) 36A
DS(ON)
D GS
This device is suitable for high side switch in SMPS and
R (at V =10V) < 9.5m
DS(ON) GS
general purpose applications.
R (at V = 4.5V) < 14m
DS(ON) GS
100% UIS Tested
100% R Tested
g
DD
TTMM
UUllttrraaSSOO--88
TToopp VViieeww BBoottttoomm VViieeww
DD
GG
SS
GG
SS
GG
SS
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV
DDSS
Gate-Source Voltage V 20 V
GS
T =25C
Continuous Drain 36
C
I
D
G
Current T =100C 28 A
C
C
Pulsed Drain Current I 90
DM
T =25C 11
A
Continuous Drain
I
A
DSM
Current T =70C 9
A
C
Avalanche Current I , I 20 A
AS AR
C
Avalanche energy L=0.1mH E , E 20 mJ
AS AR
T =25C 30
C
P
W
D
B
Power Dissipation T =100C 15
C
T =25C 2
A
P W
DSM
A
T =70C
Power Dissipation 1.3
A
Junction and Storage Temperature Range T , T -55 to 175 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
t 10s
Maximum Junction-to-Ambient 20 25 C/W
R
JA
A D
Steady-State
Maximum Junction-to-Ambient 48 60 C/W
Maximum Junction-to-Case Steady-State R 3.5 5 C/W
JC
Rev 4: Nov 2011 www.aosmd.com Page 1 of 6 AOL1448
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V
D GS
DSS
V =30V, V =0V 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 5
J
V =0V, V = 20V
I Gate-Body leakage current 100 nA
GSS DS GS
V Gate Threshold Voltage V =V I =250A 1.2 1.7 2.2 V
GS(th) DS GS D
I On state drain current V =10V, V =5V 90 A
GS DS
D(ON)
V =10V, I =20A 7.5 9.5
GS D
m
R Static Drain-Source On-Resistance T =125C 11.5 14
DS(ON)
J
V =4.5V, I =20A
11 14 m
GS D
g Forward Transconductance V =5V, I =20A 43 S
FS DS D
V Diode Forward Voltage I =1A,V =0V 0.7 1 V
S GS
SD
I Maximum Body-Diode Continuous Current 30 A
S
DYNAMIC PARAMETERS
C Input Capacitance 770 pF
iss
V =0V, V =15V, f=1MHz
C Output Capacitance 240 pF
oss GS DS
C Reverse Transfer Capacitance 77 pF
rss
R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.6
g GS DS
SWITCHING PARAMETERS
Q (10V) Total Gate Charge 14.8 18 nC
g
Q (4.5V) Total Gate Charge 7.1 9 nC
g
V =10V, V =15V, I =20A
GS DS D
Q Gate Source Charge 2.2 nC
gs
Q Gate Drain Charge 3.1 nC
gd
t Turn-On DelayTime 5 ns
D(on)
tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==00..7755,, 33 nnss
r GS DS L
R =3
t Turn-Off DelayTime 18 ns
D(off) GEN
t Turn-Off Fall Time 3 ns
f
t I =20A, dI/dt=500A/s
rr Body Diode Reverse Recovery Time F 11 ns
Q I =20A, dI/dt=500A/s
nC
rr Body Diode Reverse Recovery Charge F 23
2
A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The
JA A
Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends
DSM JA
on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it.
B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper
D J(MAX)
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
initial T =25 C.
J
D. The R is the sum of the thermal impedence from junction to case R and case to ambient.
JA JC
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating.
J(MAX)
G. The maximum current rating is package limited.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C.
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov 2011 www.aosmd.com Page 2 of 6