AON6260 60V N-Channel MOSFET General Description Product Summary V The AON6260 uses trench MOSFET technology that is DS 60V uniquely optimized to provide the most efficient high I (at V =10V) 85A D GS frequency switching performance. Both conduction and R (at V =10V) < 2.4m DS(ON) GS switching power losses are minimized due to an R (at V =4.5V) < 3.5m DS(ON) GS extremely low combination of R , Ciss and Coss. DS(ON) This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 6600 VV DDSS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 85 C I D G Current T =100C 67 A C C Pulsed Drain Current I 340 DM T =25C 41 A Continuous Drain I A DSM Current T =70C 33 A C Avalanche Current I 65 A AS C Avalanche energy L=0.1mH E 211 mJ AS T =25C 104 C P W D B Power Dissipation T =100C 41.5 C T =25C 7.3 A P W DSM A T =70C Power Dissipation 4.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 14 17 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 1 1.2 C/W JC Rev.1.0: July 2013 www.aosmd.com Page 1 of 6 AON6260 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.5 2.0 2.5 V GS(th) DS GS, D V =10V, I =20A 1.95 2.4 GS D m R Static Drain-Source On-Resistance T =125C 3.15 3.9 DS(ON) J V =4.5V, I =20A 2.8 3.5 m GS D V =5V, I =20A g Forward Transconductance 105 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 5578 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 1390 pF oss GS DS C Reverse Transfer Capacitance 75 pF rss R Gate resistance f=1MHz 0.3 0.75 1.2 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 81 115 nC g Q (4.5V) Total Gate Charge 37 52 nC g V =10V, V =30V, I =20A GS DS D Q Gate Source Charge 17 nC gs Q Gate Drain Charge 12 nC gd t Turn-On DelayTime 13.5 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =1.5, 8 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 5500 nnss D(off) GEN t Turn-Off Fall Time 11.5 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 30 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 130 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2013 www.aosmd.com Page 2 of 6