AON6294 100V N-Channel AlphaMOS General Description Product Summary V Latest Trench Power AlphaMOS (MOS MV) technology DS 100V Very Low R I (at V =10V) 52A DS(ON) D GS Low Gate Charge R (at V =10V) < 10m DS(ON) GS Optimized for fast-switching applications R (at V =6V) < 14m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested Synchronus Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6294 DFN5x6 Tape & Reel 3000 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeeteterr SSyymmbbooll MMaaxxiimmuumm UUnniitsts Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T =25C 52 C Continuous Drain I D Current T =100C 33 A C C Pulsed Drain Current I 80 DM T =25C 17 A Continuous Drain I A DSM Current T =70C 14 A C Avalanche Current I 33 A AS C Avalanche energy L=0.1mH E 54 mJ AS V Spike 10s V 120 V DS SPIKE T =25C 57 C P W D B Power Dissipation T =100C 23 C T =25C 6.2 A P W DSM A T =70C Power Dissipation 4.0 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 15 20 C/W R JA A D Maximum Junction-to-Ambient Steady-State 40 50 C/W Maximum Junction-to-Case Steady-State R 1.8 2.2 C/W JC Rev.1.0: October 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 100 V DSS D GS V =100V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 2.4 2.95 3.5 V GS(th) DS GS, D V =10V, I =20A 8.4 10 GS D m R Static Drain-Source On-Resistance T =125C 15.5 19 DS(ON) J V =6V, I =20A 11 14 m GS D g Forward Transconductance V =5V, I =20A 34 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V S GS SD I Maximum Body-Diode Continuous Current 52 A S DYNAMIC PARAMETERS C Input Capacitance 2265 pF iss C Output Capacitance V =0V, V =50V, f=1MHz 195 pF GS DS oss C Reverse Transfer Capacitance 10 pF rss R Gate resistance f=1MHz 0.7 1.5 2.3 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 28 40 nC g Q Gate Source Charge V =10V, V =50V, I =20A 10 nC GS DS D gs Q Gate Drain Charge 4 nC gd t Turn-On DelayTime 10.5 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5, 4 ns r GS DS L R =3 t Turn-Off DelayTime 20 ns D(off) GEN t Turn-Off Fall Time 4.5 ns f tt II ==2200AA,, ddII//ddtt==550000AA//ss rrrr BBooddyy DDiiooddee RReevveerrssee RReeccoovveerryy TTiimmee FF 3355 nnss Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 195 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The Power JA A dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on DSM JA the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6