AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary TM V 100V DS The AON6450 is fabricated with SDMOS trench I (at V =10V) 52A technology that combines excellent R with low gate DS(ON) D GS charge.The result is outstanding efficiency with controlled R (at V =10V) < 14.5m DS(ON) GS switching behavior. This universal technology is well R (at V = 7V) < 17.5m DS(ON) GS suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 100 V DS Gate-Source Voltage V 25 V GS T =25C 52 C Continuous Drain I D Current T =100C 33 A C C Pulsed Drain Current I 110 DM T =25C 9 A Continuous Drain I A DSM Current T =70C 7 A C Avalanche Current I 41 A AR C Repetitive avalanche energy L=0.1mH E 84 mJ AR T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 2.3 A P W DSM A T =70C Power Dissipation 1.4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 14 17 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 1 1.5 C/W JC Rev 1: May 2011 www.aosmd.com Page 1 of 7 AON6450 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V DSS D GS V =100V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J I Gate-Body leakage current V =0V, V = 25V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 2.8 3.3 3.8 V GS(th) DS GS D I On state drain current V =10V, V =5V 110 A D(ON) GS DS V =10V, I =20A 12.1 14.5 GS D m R Static Drain-Source On-Resistance T =125C 22.8 27.5 DS(ON) J V =7V, I =20A 14 17.5 m GS D g Forward Transconductance V =5V, I =20A 52 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 2000 2570 3100 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 170 250 330 pF GS DS oss C Reverse Transfer Capacitance 50 80 120 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 34 43 52 nC g V =10V, V =50V, I =20A Q Gate Source Charge 11 14 17 nC GS DS D gs Q Gate Drain Charge 8 13.5 19 nC gd t Turn-On DelayTime 15 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5, 5 ns r GS DS L R =3 t Turn-Off DelayTime 28.5 ns GEN D(off) t Turn-Off Fall Time 5 ns f t I =20A, dI/dt=500A/s 17 rr Body Diode Reverse Recovery Time F 24 31 ns Q I =20A, dI/dt=500A/s 75 nC rr Body Diode Reverse Recovery Charge F 108 140 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 150C may be used if the PCB allow s it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: May 2011 www.aosmd.com Page 2 of 7