AON7403 30V P-Channel MOSFET General Description Product Summary V -30V The AON7403 uses advanced trench technology to DS provide excellent R , and ultra-low low gate charge DS(ON) I (at V =-10V) -29A D GS with a 25V gate rating. This device is suitable for use as a R (at V =-10V) < 18m W DS(ON) GS load switch or in PWM applications. R (at V =-5V) < 36m W DS(ON) GS 100% UIS Tested DFN 3x3 EP D Top View Bottom View Top View 1 8 S D 2 7 D S 3 S 6 D 4 G 5 D G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 25 V GS T =25C -29 C Continuous Drain I D Current T =100C -18 A C C Pulsed Drain Current I -80 DM T =25C -11 A Continuous Drain I A DSM Current T =70C -8.5 A C Avalanche Current I 24 A AR C Repetitive avalanche energy L=0.1mH E 29 mJ AR T =25C 25 C P W D B Power Dissipation T =100C 10 C T =25C 4.1 A P W DSM A Power Dissipation T =70C 2.6 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 22 30 C/W R A D qJA Maximum Junction-to-Ambient Steady-State 47 60 C/W Maximum Junction-to-Lead Steady-State R 4.2 5 C/W qJC Rev.4.0: November. 2013 www.aosmd.com Page 1 of 5 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250mA, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current mA DSS T =55C -5 J V =0V, V = 25V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250mA -1.7 -2.2 -3 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -80 A GS DS D(ON) V =-10V, I =-8A 14 18 GS D m W R Static Drain-Source On-Resistance T =125C 20 25 DS(ON) J V =-5V, I =-5A 26 36 m W GS D g Forward Transconductance V =-5V, I =-8A 20 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -22 A S DYNAMIC PARAMETERS C Input Capacitance 1130 1400 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 240 pF GS DS oss C Reverse Transfer Capacitance 155 pF rss V =0V, V =0V, f=1MHz R Gate resistance 5.8 8 W GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 18 24 nC g V =-10V, V =-15V, I =-8A Q Gate Source Charge 5.5 nC gs GS DS D Q Gate Drain Charge 3.3 nC gd t Turn-On DelayTime 8.7 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =1.8W, 8.5 ns r GS DS L R =3W t Turn-Off DelayTime GEN 18 ns D(off) t Turn-Off Fall Time 7 ns f t I =-8A, dI/dt=500A/ ms rr Body Diode Reverse Recovery Time F 12 16 ns Q I =-8A, dI/dt=500A/ ms nC rr Body Diode Reverse Recovery Charge F 26 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The qJA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM qJA application depends on the user s specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. qJA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: November. 2013 www.aosmd.com Page 2 of 5