AON7407 20V P-Channel MOSFET General Description Product Summary V -20V The AON7407 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =-4.5V) -40A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-4.5V) < 9.5m DS(ON) GS and battery protection applications. R (at V =-2.5V) < 12.5m DS(ON) GS R (at V =-1.8V) < 18m DS(ON) GS 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS T =25C -40 Continuous Drain C I D G T =100C A Current -29 C C Pulsed Drain Current I -100 DM T =25C -14.5 A Continuous Drain I A DSM Current T =70C -11.5 A C Avalanche Current I , I -40 A AS AR C Avalanche energy L=0.1mH E , E 80 mJ AS AR T =25C 29 C P W D B T =100C Power Dissipation 12 C T =25C 3.1 A P W DSM A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Steady-State Maximum Junction-to-Case R 3.5 4.2 C/W JC Rev 0: June 2011 www.aosmd.com Page 1 of 6 AON7407 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =-250A, V =0V BV Drain-Source Breakdown Voltage -20 V DSS D GS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C -5 J V =0V, V = 8V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V , I =-250A -0.3 -0.55 -0.9 V GS(th) DS GS D V =-4.5V, V =-5V I On state drain current -100 A D(ON) GS DS V =-4.5V, I =-14A 7.6 9.5 GS D m T =125C 10.5 13.5 J R Static Drain-Source On-Resistance DS(ON) V =-2.5V, I =-13A 9.3 12.5 m GS D V =-1.8V, I =-11A 11.4 18 m GS D V =-5V, I =-14A g Forward Transconductance 72 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.52 -1 V SD S GS I Maximum Body-Diode Continuous Current -35 A S DYNAMIC PARAMETERS C Input Capacitance 2795 3495 4195 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 365 528 690 pF oss GS DS C Reverse Transfer Capacitance 255 425 595 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.8 5.6 GS DS g SWITCHING PARAMETERS Q Total Gate Charge 35 44 53 nC g V =-4.5V, V =-10V, I =-14A Q Gate Source Charge 9 nC gs GS DS D Q Gate Drain Charge 11 nC gd t Turn-On DelayTime 18 ns D(on) V =-4.5V, V =-10V, t Turn-On Rise Time 32 ns r GS DS R =0.75, R =3 t Turn-Off DelayTime 136 ns L GEN D(off) t Turn-Off Fall Time 59 ns f t I =-14A, dI/dt=500A/s 26 33 40 ns rr Body Diode Reverse Recovery Time F Q I =-14A, dI/dt=500A/s 80 100 120 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: June 2011 www.aosmd.com Page 2 of 6