AON7421 20V P-Channel MOSFET General Description Product Summary V The AON7421 combines advanced trench MOSFET -20V DS technology with a low resistance package to provide I (at V =-10V) -50A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-10V) < 4.6m DS(ON) GS and battery protection applications. R (at V =-4.5V) < 5.8m DS(ON) GS R (at V =-2.5V) < 9.0m DS(ON) GS 100% UIS Tested 100% R Tested g DFN 3.3x3.3 EP Top View Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -20 V DDSS Gate-Source Voltage V 12 V GS T =25C -50 Continuous Drain C I D G Current T =100C -39 A C C Pulsed Drain Current I -200 DM T =25C -30 A Continuous Drain I A DSM Current T =70C -24.5 A C Avalanche Current I 50 A AS C Avalanche energy L=0.1mH E 125 mJ AS T =25C 83 C P W D B T =100C Power Dissipation 33 C T =25C 6.2 A P W DSM A T =70C Power Dissipation 4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 16 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 45 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev.2.0: May 2013 www.aosmd.com Page 1 of 6 AON7421 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =12V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =-250A Gate Threshold Voltage -0.5 -0.8 -1.2 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -200 A GS DS D(ON) V =-10V, I =-20A 3.7 4.6 GS D m T =125C 5 6.2 J R Static Drain-Source On-Resistance DS(ON) V =-4.5V, I =-20A 4.5 5.8 m GS D V =-2.5V, I =-20A 6.3 9 m GS D g Forward Transconductance V =-5V, I =-20A 90 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.58 -1 V SD S GS G I Maximum Body-Diode Continuous Current -50 A S DYNAMIC PARAMETERS C Input Capacitance 4550 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 823 pF GS DS oss C Reverse Transfer Capacitance 563 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.1 4.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 95 135 nC g Q (4.5V) Total Gate Charge 44 62 nC g V =-10V, V =-10V, I =-20A GS DS D Q Gate Source Charge 6.5 nC gs Q Gate Drain Charge 14 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 77 nnss D(on) t Turn-On Rise Time V =-10V, V =-10V, R =0.5, 12 ns r GS DS L R =3 t Turn-Off DelayTime 134 ns GEN D(off) t Turn-Off Fall Time 45 ns f t I =-20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 30 ns Q I =-20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 75 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: May 2013 www.aosmd.com Page 2 of 6