AON7458
250V,5A N-Channel MOSFET
General Description Product Summary
The AON7458 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of V
300V@150
DS
performance and robustness in popular AC-DC
I (at V =10V) 5A
D GS
applications.By providing low R , C and C along with
DS(on) iss rss
R (at V =10V) < 0.56
DS(ON) GS
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
100% UIS Tested!
100% R Tested!
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SS
Absolute Maximum Ratings T =25C unless otherwise noted
AA
Parameter Symbol Maximum Units
Drain-Source Voltage V 250 V
DS
Gate-Source Voltage V 30 V
GS
T =25C
Continuous Drain 5
C
I
D
B
T =100C
Current 3.2 A
C
C
Pulsed Drain Current I 16
DM
T =25C 1.5
A
Continuous Drain
I
A
DSM
Current T =70C 1.2
A
C
Avalanche Current I 2.1 A
AR
C
Repetitive avalanche energy E 66 mJ
AR
G
Single pulsed avalanche energy E 132 mJ
AS
Peak diode recovery dv/dt dv/dt 5 V/ns
T =25C
33 W
C
P
D
B
T =100C
Power Dissipation 13 W
C
T =25C
3.1
A
P
W
DSM
A
T =70C
Power Dissipation 2
A
Junction and Storage Temperature Range T , T -50 to 150 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s
30 40 C/W
R
A D JA
Maximum Junction-to-Ambient Steady-State
60 75 C/W
Maximum Junction-to-Case Steady-State
R 3.1 3.7 C/W
JC
Rev0: Apr 2011 www.aosmd.com Page 1 of 6 AON7458
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
I =250A, V =0V, T =25C
250
D GS J
BV
Drain-Source Breakdown Voltage
DSS
I =250A, V =0V, T =150C 300 V
D GS J
BV
DSS o
Zero Gate Voltage Drain Current ID=250A, VGS=0V
0.25
V/ C
/TJ
V =250V, V =0V 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
V =200V, T =125C
10
DS J
I Gate-Body leakage current V =0V, V =30V 100
GSS DS GS n
V V =5V, I =250A
Gate Threshold Voltage 3.1 3.7 4.3 V
GS(th) DS D
R Static Drain-Source On-Resistance V =10V, I =1.5A 0.46 0.56
DS(ON) GS D
g Forward Transconductance V =40V, I =1.5A 5 S
DS D
FS
I =1A,V =0V
V Diode Forward Voltage 0.77 1 V
SD S GS
I Maximum Body-Diode Continuous Current 5 A
S
I Maximum Body-Diode Pulsed Current 16 A
SM
DYNAMIC PARAMETERS
C Input Capacitance 240 306 370 pF
iss
V =0V, V =25V, f=1MHz
C Output Capacitance GS DS 34 51 68 pF
oss
C Reverse Transfer Capacitance 3.2 pF
rss
V =0V, V =0V, f=1MHz
R Gate resistance 1.7 3.4 5.1
g GS DS
SWITCHING PARAMETERS
Q Total Gate Charge 4.8 6.0 7.2 nC
g
V =10V, V =200V, I =1.5A
Q Gate Source Charge GS DS D 2.0 nC
gs
Q Gate Drain Charge 1.5 nC
gd
t Turn-On DelayTime 14 ns
D(on)
t Turn-On Rise Time V =10V, V =125V, I =1.5A, 12 ns
r GS DS D
RR ==2255
tt TTuurrnn--OOffff DDeellaayyTTiimmee GG 2233 nnss
DD((ooffff))
t Turn-Off Fall Time 12 ns
f
t I =1.5A,dI/dt=100A/s,V =100V 52 77 102
rr Body Diode Reverse Recovery Time F DS ns
Q I =1.5A,dI/dt=100A/s,V =100V
0.2 0.29 0.40 C
rr Body Diode Reverse Recovery Charge F DS
2
A. The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The
JA A
Power Dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given
DSM JA
application depends on the user's specific board design.
B. The power dissipation PD is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep initial
J(MAX)
T =25 C.
J
D. The R is the sum of the thermal impedance from junction to case R and case to ambient.
JA JC
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating.
J(MAX)
2
G.These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C.
A
H. L=60mH, I =2.1A, V =150V, R =10, Starting T =25 C.
AS DD G J
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Apr 2011 www.aosmd.com Page 2 of 6