AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Latest Trench Power AlphaMOS (MOS LV) technology Q1 Q2 Very Low RDS(on) at 4.5V V 30V 30V GS DS Low Gate Charge I (at V =10V) 16A 18A D GS High Current Capability R (at V =10V) <10.2m <7.7m DS(ON) GS RoHS and Halogen-Free Compliant R (at V = 4.5V) <15.8m <11.6m DS(ON) GS 100% UIS Tested Application 100% Rg Tested DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial Power DFN3x3A Top View Bottom View Top View Bottom View G2 S2 S2 S2 (S1/D2) D1 G1 D1 D1 D1 AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss TT ==2255CC uunnlleessss ootthheerrwwiissee nnootteedd AA Parameter Symbol Max Q1 Max Q2 Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 20 V GS T =25C 16 18 Continuous Drain C I D G Current T =100C 12 14 A C C Pulsed Drain Current I 64 72 DM T =25C 13 15 A Continuous Drain I A DSM Current T =70C 7.8 9 A C Avalanche Current I 19 25 A AS C Avalanche Energy L=0.05mH E 9 16 mJ AS V Spike 100ns V 36 36 V DS SPIKE T =25C 23 25 C P W D B Power Dissipation T =100C 9 10 C T =25C 2.5 2.5 A P W DSM A Power Dissipation T =70C 0.9 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 Units A t 10s Maximum Junction-to-Ambient 40 50 40 50 C/W R JA A D Maximum Junction-to-Ambient Steady-State 70 90 70 90 C/W Maximum Junction-to-Case Steady-State R 4.5 5.4 4.2 5 C/W JC Rev0 : April 2012 www.aosmd.com Page 1 of 10 AON7934 Q1 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.2 V GS(th) DS GS D V =10V, I =13A 8.3 10.2 GS D m R Static Drain-Source On-Resistance T =125C 11.2 13.7 DS(ON) J V =4.5V, I =10A 12.4 15.8 m GS D V =5V, I =13A g Forward Transconductance 50 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 16 A S DYNAMIC PARAMETERS C Input Capacitance 485 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 235 pF oss GS DS C Reverse Transfer Capacitance 32 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.9 1.8 2.7 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 8 11 nC g Q (4.5V) Total Gate Charge 3.9 5.3 nC g V =10V, V =15V, I =13A GS DS D Q Gate Source Charge 1.1 nC gs Q Gate Drain Charge 2.1 nC gd t Turn-On DelayTime 3.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =1.2, 2.8 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1166..33 nnss D(off) GEN t Turn-Off Fall Time 3 ns f t I =13A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 9.9 ns Q I =13A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 12.9 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : April 2012 www.aosmd.com Page 2 of 10