AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary TM V 600V CE The Alpha IGBT line of products offers best-in-class I (T =100C) 10A performance in conduction and switching losses, with C C robust short circuit capability. They are designed for ease V (T =25C) 1.53V CE(sat) C of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft co- package diode is targeted for minimal losses in motor control applications. 100% E /E Tested on off 100% Q Tested rr 100% Short Circuit Current Tested* TToopp VViieeww CC TTOO--222200 GG EE CC GG EE AAOOTT1100BB6600DD Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll AAOOTT1100BB6600DD UUnniittss Collector-Emitter Voltage V 600 V CE Gate-Emitter Voltage V 20 V GE T =25C 20 C Continuous Collector I A C Current T =100C 10 C Pulsed Collector Current, Limited by T I 40 A Jmax CM Turn off SOA, V 600V, Limited by T I 40 A CE Jmax LM T =25C 20 C Continuous Diode I A F T =100C Forward Current 10 C Diode Pulsed Current, Limited by T I 40 A Jmax FM Short circuit withstanding time V = 15V, V GE CE t 10 s SC 400V, Delay between short circuits 1.0s, T =25C C T =25C 163 C P W D T =100C Power Dissipation 82 C Junction and Storage Temperature Range T , T -55 to 175 C J STG Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOT10B60D Units Maximum Junction-to-Ambient R 65 C/W JA Maximum IGBT Junction-to-Case R 0.92 C/W JC Maximum Diode Junction-to-Case R 1.7 C/W JC * V equal to 50V CE Rev.1.0: Nov 2013 www.aosmd.com Page 1 of 9 AOT10B60D Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Collector-Emitter Breakdown Voltage I =250A, V =0V, T =25C 600 - - V CES C GE J T =25C - 1.53 1.8 J V V =15V, I =10A Collector-Emitter Saturation Voltage T =125C - 1.75 - V CE(sat) GE C J T =175C - 1.88 - J T =25C - 1.52 1.85 J V V =0V, I =10A Diode Forward Voltage T =125C - 1.48 - V F GE C J T =175C - 1.39 - J V V =V , I =250A Gate-Emitter Threshold Voltage - 5.6 - V GE(th) CE GE C T =25C - - 10 J I Zero Gate Voltage Collector Current V =600V, V =0V T =125C - - 200 CES CE GE A J T =175C - - 2000 J I Gate-Emitter leakage current V =0V, V =20V - - 100 nA GES CE GE V =20V, I =10A g Forward Transconductance - 4.8 - S FS CE C DYNAMIC PARAMETERS C Input Capacitance - 824 - pF ies V =0V, V =25V, f=1MHz C Output Capacitance GE CE - 68 - pF oes C Reverse Transfer Capacitance - 2.7 - pF res Q Total Gate Charge - 17.4 - nC g V =15V, V =480V, I =10A Q Gate to Emitter Charge - 6.2 - nC ge GE CE C Q Gate to Collector Charge - 6.3 - nC gc Short circuit collector current, Max. 1000 short circuits, Delay between I V =15V, V =400V, R =30 GE CE G - 43 - A C(SC) short circuits 1.0s V =0V, V =0V, f=1MHz R Gate resistance - 3.2 - g GE CE SWITCHING PARAMETERS, (Load Iductive, T =25C) J t Turn-On DelayTime - 10 - ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee -- 1155 -- nnss rr TT ==2255CC JJ t Turn-Off Delay Time - 72 - ns V =15V, V =400V, I =10A, D(off) GE CE C t Turn-Off Fall Time R =30, - 8.8 - ns f G Parasitic nductance=100nH E Turn-On Energy - 0.26 - mJ on E Turn-Off Energy - 0.07 - mJ off E Total Switching Energy - 0.33 - mJ total t rr Diode Reverse Recovery Time - 105 - ns T =25C J Q rr Diode Reverse Recovery Charge - 0.25 - C I =10A,dI/dt=200A/s,V =400V F CE I rm Diode Peak Reverse Recovery Current - 5 - A SWITCHING PARAMETERS, (Load Iductive, T =175C) J t Turn-On DelayTime - 10.4 - ns D(on) t Turn-On Rise Time - 15.6 - ns r T =175C J t Turn-Off Delay Time - 95 - ns D(off) V =15V, V =400V, I =10A, GE CE C t Turn-Off Fall Time - 11.2 - ns f R =30, G E Turn-On Energy - 0.37 - mJ on Parasitic Inductance=100nH E Turn-Off Energy - 0.17 - mJ off E Total Switching Energy - 0.54 - mJ total t rr Diode Reverse Recovery Time - 196 - ns T =175C J Q rr Diode Reverse Recovery Charge - 0.63 - C I =10A,dI/dt=200A/s,V =400V F CE I rm Diode Peak Reverse Recovery Current - 6.8 - A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: Nov 2013 www.aosmd.com Page 2 of 9