AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary V 600V 150 The AOT14N50 &AOB14N50 & AOTF14N50 have been DS fabricated using an advanced high voltage MOSFET I (at V =10V) 14A D GS process that is designed to deliver high levels of R (at V =10V) < 0.38 DS(ON) GS performance and robustness in popular AC-DC applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT14N50L & AOTF14N50L & AOB14N50L Top View TO-263 D 2 TO-220 TO-220F D PAK D G S S S S D D G AOT14N50 AOTF14N50 G G AOB14N50 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT14N50/AOB14N50 AOTF14N50 Units Drain-Source Voltage V 500 V DS Gate-Source Voltage V 30 V GS T =25C 14 14* C Continuous Drain I D T =100C Current 11 11* A C C Pulsed Drain Current I 56 DM C Avalanche Current I 6 A AR C Repetitive avalanche energy E 540 mJ AR G Single plused avalanche energy E 1080 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C W 278 50 C P B D o o Power Dissipation Derate above 25 C 2.2 0.4 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering T 300 C L purpose, 1/8 from case for 5 seconds Thermal Characteristics Parameter Symbol AOT14N50/AOB14N50 AOTF14N50 Units A,D Maximum Junction-to-Ambient R 65 65 C/W JA A Maximum Case-to-sink R CS 0.5 -- C/W Maximum Junction-to-Case R 0.45 2.5 C/W JC * Drain current limited by maximum junction temperature. Rev6: Jul 2011 www.aosmd.com Page 1 of 6 AOT14N50/AOB14N50/AOTF14N50 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 500 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 600 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V D GS 0.5 V/ C Coefficient /TJ V =500V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =400V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 n GSS DS GS V V =5V I =250A Gate Threshold Voltage 3.3 4.2 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =7A 0.29 0.38 GS D DS(ON) V =40V, I =7A g Forward Transconductance 20 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.71 1 V SD S GS I Maximum Body-Diode Continuous Current 14 A S I Maximum Body-Diode Pulsed Current 56 A SM DYNAMIC PARAMETERS C Input Capacitance 1531 1914 2297 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 153 191 229 pF GS DS oss C Reverse Transfer Capacitance 11 16 20 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.75 3.5 5.3 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 42.8 51 nC g Q Gate Source Charge V =10V, V =400V, I =14A 9.3 11 nC GS DS D gs Q Gate Drain Charge 20.3 24 nC gd t Turn-On DelayTime 44 53 ns D(on) t Turn-On Rise Time V =10V, V =250V, I =14A, 84 101 ns GS DS D r R =25 t Turn-Off DelayTime G 92 110 ns D(off) t Turn-Off Fall Time 50 60 ns f t I =14A,dI/dt=100A/s,V =100V rr Body Diode Reverse Recovery Time F DS 289 347 ns Q I =14A,dI/dt=100A/s,V =100V C rr Body Diode Reverse Recovery Charge F DS 4.93 6 A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =6A, V =150V, R =25 , Starting T =25C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev6: Jul 2011 www.aosmd.com Page 2 of 6