AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary V The AOT2500L/AOB2500L uses Trench MOSFET DS 150V I (at V =10V) 152A technology that is uniquely optimized to provide the most D GS * R (at V =10V) < 6.5m (< 6.2m ) efficient high frequency switching performance. Both DS(ON) GS * R (at V =6V) < 7.6m (<7.3m ) conduction and switching power losses are minimized DS(ON) GS due to an extremely low combination of R , Ciss and DS(ON) Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g TO-263 TO220 2 D PAK Top View Bottom View D Top View Bottom View D D D D G S G S S D D G G S G AOT2500L AOB2500L S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 115500 VV DDSS Gate-Source Voltage V 20 V GS T =25C 152 C Continuous Drain I D Current T =100C 107 A C C Pulsed Drain Current I 440 DM T =25C 11.5 A Continuous Drain I A DSM Current T =70C 9.0 A C Avalanche Current I 65 A AS C Avalanche energy L=0.3mH E 634 mJ AS T =25C 375 C P W D B Power Dissipation T =100C 187.5 C T =25C 2.1 A P W DSM A T =70C Power Dissipation 1.3 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 12 15 C/W R JA A D Steady-State Maximum Junction-to-Ambient 48 60 C/W Maximum Junction-to-Case Steady-State R 0.26 0.4 C/W JC * Surface mount package TO263 Rev.1. 0: July 2013 www.aosmd.com Page 1 of 6 AOT2500L/AOB2500L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 150 V D GS DSS V =150V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 2.3 2.8 3.5 V GS(th) DS GS D V =10V, I =20A 5.4 6.5 GS D m TO220 T =125C 10.2 12.3 J V =6V, I =20A GS D 5.9 7.6 m TO220 R Static Drain-Source On-Resistance DS(ON) V =10V, I =20A GS D 5.1 6.2 m TO263 V =6V, I =20A GS D 5.6 7.3 m TO263 V =5V, I =20A g Forward Transconductance 70 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.66 1 V SD S GS I Maximum Body-Diode Continuous Current 152 A S DYNAMIC PARAMETERS C Input Capacitance 6460 pF iss V =0V, V =75V, f=1MHz C Output Capacitance 586 pF oss GS DS C Reverse Transfer Capacitance 22 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2.1 3.2 GS DS g SWITCHING PARAMETERS Q Total Gate Charge 97 136 nC g(10V) VV ==1100VV,, VV ==7755VV,, II ==2200AA QQ GGaattee SSoouurrccee CChhaarrggee 2222..55 nnCC gs GS DS D Q Gate Drain Charge 17 nC gd t Turn-On DelayTime 18.5 ns D(on) t Turn-On Rise Time V =10V, V =75V, R =3.75, 20 ns r GS DS L t Turn-Off DelayTime R =3 67.5 ns GEN D(off) t Turn-Off Fall Time 14 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 90 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 1090 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: July 2013 www.aosmd.com Page 2 of 6