AOT416
100V N-Channel MOSFET
TM
SDMOS
General Description Product Summary
TM
V 100V
DS
The AOT416 is fabricated with SDMOS trench
technology that combines excellent R with low gate I (at V =10V) 42A
D GS
DS(ON)
charge.The result is outstanding efficiency with controlled
R (at V =10V) < 37m
DS(ON) GS
switching behavior. This universal technology is well
R (at V = 7V) < 43m
DS(ON) GS
suited for PWM, load switching and general purpose
applications.
100% UIS Tested
100% R Tested
g
TO220
Top View Bottom View
D
D
D
G
D G
S
S
D
S
G
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
DDrraaiinn--SSoouurrccee VVoollttaaggee VV 110000 VV
DDSS
Gate-Source Voltage V 25 V
GS
T =25C
42
C
Continuous Drain
I
D
Current T =100C 30 A
C
C
Pulsed Drain Current I 110
DM
T =25C 4.7
A
Continuous Drain
I
A
DSM
Current T =70C 3.8
A
C
Avalanche Current I , I 28 A
AS AR
C
Avalanche energy L=0.1mH E , E 39 mJ
AS AR
T =25C 150
C
P
W
D
B
Power Dissipation T =100C 75
C
T =25C 1.92
A
P W
DSM
A
T =70C
Power Dissipation 1.23
A
Junction and Storage Temperature Range T , T -55 to 175 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
t 10s
Maximum Junction-to-Ambient 11.6 13.9 C/W
R
JA
A D
Steady-State
Maximum Junction-to-Ambient 54 65 C/W
Maximum Junction-to-Case Steady-State R 0.7 1 C/W
JC
Rev.2. 0: August 2013 www.aosmd.com Page 1 of 6 AOT416
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V
D GS
DSS
V =100V, V =0V 10
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 50
J
V =0V, V =25V
I Gate-Body leakage current 100 nA
GSS DS GS
V V =V I =250A
Gate Threshold Voltage 2.8 3.4 4 V
GS(th) DS GS D
I On state drain current V =10V, V =5V 110 A
GS DS
D(ON)
V =10V, I =20A 31 37
GS D
m
R Static Drain-Source On-Resistance T =125C 55 66
DS(ON)
J
V =7V, I =15A
35 43 m
GS D
V =5V, I =20A
g Forward Transconductance 28 S
FS DS D
V Diode Forward Voltage I =1A,V =0V 0.68 1 V
S GS
SD
I Maximum Body-Diode Continuous Current 95 A
S
DYNAMIC PARAMETERS
C Input Capacitance 950 1180 1450 pF
iss
V =0V, V =50V, f=1MHz
C Output Capacitance 77 110 145 pF
oss GS DS
C Reverse Transfer Capacitance 21 36 50 pF
rss
R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2
g GS DS
SWITCHING PARAMETERS
Q Total Gate Charge 15 19 23 nC
g
V =10V, V =50V, I =20A
Q Gate Source Charge 5.5 7 8.5 nC
gs GS DS D
Q Gate Drain Charge 3.5 6.3 9 nC
gd
t Turn-On DelayTime 10 ns
D(on)
t Turn-On Rise Time V =10V, V =50V, R =2.5, 7.2 ns
r GS DS L
RR ==33
tt TTuurrnn--OOffff DDeellaayyTTiimmee 1155 nnss
D(off) GEN
t Turn-Off Fall Time 7 ns
f
t I =20A, dI/dt=500A/s 13
rr Body Diode Reverse Recovery Time F 19 25 ns
Q I =20A, dI/dt=500A/s 50 nC
rr Body Diode Reverse Recovery Charge F 70 90
2
A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The
JA A
Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends
DSM JA
on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it.
B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper
D J(MAX)
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
initial T =25 C.
J
D. The R is the sum of the thermal impedence from junction to case R and case to ambient.
JA JC
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating.
J(MAX)
2
G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C.
A
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2. 0: August 2013 www.aosmd.com Page 2 of 6