AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT424 uses advanced trench technology to V (V) = 30V DS provide excellent R , low gate charge and low I = 110A (V = 10V) DS(ON) D GS gate resistance. This device is ideally suited for use as R < 4m (V = 10V) DS(ON) GS a low side switch in CPU core power conversion. R < 5.5m (V = 4.5V) DS(ON) GS Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications). TO-220 D G S G D S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS G Continuous Drain T =25C 110 C B B,G T =100C I A Current 88 C D Pulsed Drain Current I 200 DM C Avalanche Current I 30 A AR C Repetitive avalanche energy L=0.1mH E 112 mJ AR T =25C 100 C P W D B T =100C Power Dissipation 50 C Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 14.2 20 C/W R A JA Maximum Junction-to-Ambient Steady-State 39 50 C/W C Steady-State R 0.8 1.5 C/W Maximum Junction-to-Case JC Alpha & Omega Semiconductor, Ltd. www.aosmd.comElectrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V DSS D GS V =24V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1 2 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 110 A D(ON) GS DS V =10V, I =30A 3 4 GS D m R Static Drain-Source On-Resistance T =125C 4.7 6 DS(ON) J V =4.5V, I =30A 4.3 5.5 m GS D g Forward Transconductance V =5V, I =30A 106 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V SD S GS I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 3700 4400 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 700 pF oss GS DS C Reverse Transfer Capacitance 390 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.54 0.7 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 59.6 72 nC g Q (4.5V) Total Gate Charge 30.4 37 nC g V =10V, V =15V, I =30A GS DS D Q Gate Source Charge 9.5 nC gs Q Gate Drain Charge 19.8 nC gd t Turn-On DelayTime 12.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.5, 35.5 ns r GS DS L R =3 t Turn-Off DelayTime 40 ns GEN D(off) t Turn-Off Fall Time 32.5 ns f t I =30A, dI/dt=100A/s 35.3 42 rr Body Diode Reverse Recovery Time F ns Q I =30A, dI/dt=100A/s 30.7 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A dissipation P is based on steady-state R and the maximum allowed junction temperature of 150C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T =175C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA curve A provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev4: July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com