AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary V 600V 150 The AOT22N50 & AOTF22N50 have been fabricated DS using an advanced high voltage MOSFET process that is I (at V =10V) 22A D GS designed to deliver high levels of performance and R (at V =10V) < 0.26 DS(ON) GS robustness in popular AC-DC applications.By providing low R , C and C along with guaranteed avalanche DS(on) iss rss capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT22N50L&AOTF22N50L Top View TO-220F TO-220 D G S D S D S G G AOT22N50 AOTF22N50 Orderable Part Number Package Type Form Minimum Order Quantity AOT22N50L TO220 Green Tube 1000 AOTF22N50 TO-220F Pb Free Tube 1000 AOTF22N50L TO-220F Green Tube 1000 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter AOT22N50 AOTF22N50 AOTF22N50L Units Symbol Drain-Source Voltage V 500 V DS Gate-Source Voltage V 30 V GS T =25C 22 22* 22* C Continuous Drain I D Current T =100C 15 15* 15* A C C Pulsed Drain Current I 88 DM C Avalanche Current I 7 A AR C Repetitive avalanche energy E 735 mJ AR G Single plused avalanche energy E 1470 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C W 417 50 39 C P D B o o Power Dissipation Derate above 25 C 3.3 0.4 0.3 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOT22N50 AOTF22N50 AOTF22N50L Units A,D Maximum Junction-to-Ambient R 65 65 65 C/W JA A R Maximum Case-to-sink CS 0.5 -- -- C/W Maximum Junction-to-Case R 0.3 2.5 3.2 C/W JC * Drain current limited by maximum junction temperature. www.aosmd.com Rev.2.0: October 2014 Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 500 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 600 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V 0.57 D GS V/ C Coefficient /TJ V =500V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =400V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 n GSS DS GS V V =5V I =250A Gate Threshold Voltage 3.4 4 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =11A 0.21 0.26 GS D DS(ON) V =40V, I =11A g Forward Transconductance 25 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 22 A S I Maximum Body-Diode Pulsed Current 88 A SM DYNAMIC PARAMETERS C Input Capacitance 2465 3086 3710 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 200 290 380 pF GS DS oss C Reverse Transfer Capacitance 14 24 35 pF rss V =0V, V =0V, f=1MHz R Gate resistance 0.7 1.4 2.1 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 55 69 83 nC g Q Gate Source Charge V =10V, V =400V, I =22A 17 22 27 nC GS DS D gs Q Gate Drain Charge 12 24 36 nC gd t Turn-On DelayTime 60 ns D(on) t Turn-On Rise Time V =10V, V =250V, I =22A, 122 ns GS DS D r R =25 t Turn-Off DelayTime G 124 ns DD((ooffff)) t Turn-Off Fall Time 77 ns f t I =22A,dI/dt=100A/s,V =100V 415 524 630 rr Body Diode Reverse Recovery Time F DS ns Q I =22A,dI/dt=100A/s,V =100V 7.5 9.6 12 C rr Body Diode Reverse Recovery Charge F DS A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =7A, V =150V, R =25 , Starting T =25 C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: October 2014 www.aosmd.com Page 2 of 6